1998
DOI: 10.1016/s0925-9635(97)00257-4
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Band diagram of diamond and diamond-like carbon surfaces

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Cited by 92 publications
(30 citation statements)
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“…The inclusion of QP effects allows for a better agreement with the measurements: our GW value for χ, 1.1 eV, falls well within the experimental range. Comparison with other DFT calculations, corrected by using an upward shift of the conduction states [49] or corrected by the use of the experimental C bulk gap [61,55] …”
Section: Clean Surfacementioning
confidence: 99%
See 1 more Smart Citation
“…The inclusion of QP effects allows for a better agreement with the measurements: our GW value for χ, 1.1 eV, falls well within the experimental range. Comparison with other DFT calculations, corrected by using an upward shift of the conduction states [49] or corrected by the use of the experimental C bulk gap [61,55] …”
Section: Clean Surfacementioning
confidence: 99%
“…As a result, the presence of hydrogen lowers the energy barrier at the surface of diamond, and oxygen behaves in the exact opposite way; in fact the electron affinity of diamond can be tuned smoothly from its lowest to its maximum value by controlling the coverage of hydrogen and oxygen [17]. Many theoretical [49,54,61,67,55] and experimental ( [17,65,55] and refs. therein) studies on the electron affinity of the C(001):H system have been carried out.…”
Section: Electron Affinitymentioning
confidence: 99%
“…From the experimentally obtained G p /ω vs. ln(ω) curve (Fig. 3d), the ratio of two G p /ω values at two discrete frequencies (peak frequency ω p and 5 ω p or 1/5 ω p for example [12]) is evaluated and this ratio is used to find s by solving numerically the relation (7). Finally, D it is determined from the relation (6) at the G p /ω vs. ln(ω) peak for the gate voltage V G at hand.…”
Section: Admittance Analysismentioning
confidence: 99%
“…[3,4]. Moreover, its chemical inertness and dielectric behavior render it a candidate for passivation or insulator layer in both VLSI circuits assigned to reactive media and high-speed integrated circuits of the metal-insulator-semiconductor structure [5][6][7][8][9].…”
Section: Introductionmentioning
confidence: 99%
“…H-termination in diamond forms heteropolar C-H bonds yielding H with a negative charge (surface side) and C with a positive charge (film side) helping to reduce the work function of the material. [32][33][34][35][36][37][38] This effect is reduced in films of smaller grain size due to a larger fraction of sp 2 C on their surface in comparison to MCD, resulting in a lower responsivity in Region C for SMCD and NCD. Figure 4(b) illustrates schematically the source of photoelectrons within the band diagram of diamond responsible for the responsivities obtained in Regions A, B, and C. We examine electron escape probability (Equation (3)) from the diamond surface with v negative electron affinity and illuminated with radiation of energy h .…”
mentioning
confidence: 99%