Band carriers scattering on impurities from data of high-resolution X-ray diffractometry

Boǐko, I. I.

doi:10.15407/spqeo13.02.214

Semicond. Phys. Quantum Electron. Optoelectron.

2010

DOI: 10.15407/spqeo13.02.214

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Band carriers scattering on impurities from data of high-resolution X-ray diffractometry

I. I. Boǐko¹

Abstract: Mobility of band carriers scattered on donors, partially ionized, partially neutral, at low temperatures, is considered in general and calculated for AIII-BV group crystals. It is shown that temperature dependence of mobility is determined by relationship between number of ionized and neutral donors and by average energy of electrons.

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Cited by 4 publications

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Efficient spin control in high-quality-factor planar microcavities

2012

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A semiconductor microcavity embedding donor impurities and excited by a laser field is modelled. By including general decay and dephasing processes, and in particular cavity photon leakage, detailed simulations show that control over the spin dynamics is significally enhanced in high-quality-factor cavities, in which case picosecond laser pulses may produce spin-flip with high-fidelity final states.

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Efficient spin control in high-quality-factor planar microcavities

2012

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Transport phenomena of two-dimensional band carriers with Dirac-like energetic spectrum

Boǐko¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Conductivity of monolayer and bilayer graphene is considered with due regard for mutual drag of band electrons and holes. Search of contribution of the drag to conductivity shows that it sufficiently influences on mobility at high concentrations of carriers, which belong to different groups and have different drift velocities. In bilayer system the mutual drag can even change the direction of partial current. Magnetoresistivity and Hall effect were theoretically investigated for neutral and gated graphene. It is shown that for spatially unlimited neutral graphene Hall effect is totally absent. In gated, exactly monopolar graphene for the same case effect of magnetoresistivity vanishes; here the Hall constant does not involve any relaxation characteristic in contrast to results obtained for the popular method of τ-approximation. It is shown that limited sizes of crystal with monopolar conductivity can be cause for impressive dependence of the Hall constant and magnetoresistivity on the value of external magnetic field.

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Influence of field dependent form of collision integral on kinetic coefficients

Boǐko¹

2016

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The kinetic equation is turned out in the form that contains collision integral obviously dependent on the value of external electric and magnetic fields. The correspondent calculation of kinetic coefficients shows that for the case considered here they depend evidently on the ratio of average deBroighle wavelength and free-path length. Just here, the real possibility appears to reasonably separate physical kinetics by the classic and non-classic (quantum) ones.

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Band carriers scattering on impurities from data of high-resolution X-ray diffractometry

Cited by 4 publications

References 10 publications

Efficient spin control in high-quality-factor planar microcavities

Efficient spin control in high-quality-factor planar microcavities

Transport phenomena of two-dimensional band carriers with Dirac-like energetic spectrum

Influence of field dependent form of collision integral on kinetic coefficients

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