Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) p-n heterojunction determined by X-ray photoelectron spectroscopy

Gong, Jiarui; Zhou, Jie; Dheenan, Ashok; Sheikhi, Moheb; Alema, Fikadu; Ng, Tien Khee; Pasayat, Shubhra S.; Gan, Qiaoqiang; Osinsky, Andrei; Gambin, Vincent; Gupta, Chirag; Rajan, Siddharth; Ooi, Boon S.; Ma, Zhenqiang

doi:10.1016/j.apsusc.2024.159615

Applied Surface Science

2024

DOI: 10.1016/j.apsusc.2024.159615

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Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) p-n heterojunction determined by X-ray photoelectron spectroscopy

Jiarui Gong,

Jie Zhou,

Ashok Dheenan

et al.

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Cited by 6 publications

References 31 publications

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Space‐Confined Growth of Ultrathin 2D β‐Ga₂O₃ Nanoflakes for Artificial Neuromorphic Application

Liu,

Yao

et al. 2024

Small Science

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In recent years, wide‐bandgap semiconductor β‐Ga2O3 material has been widely studied because of its excellent properties. Simultaneously, 2D metal oxides (2DMOs) have also become a focus of research owing to their superior stability and unique physical properties arising from quantum confinement effects. Therefore, the exploration of 2D β‐Ga2O3 is expected to reveal its novel electrical properties in electronic applications. However, the synthesis of high‐quality 2D β‐Ga2O3 remains a formidable challenge. Herein, a confined space is constructed to synthesize high‐quality 2D β‐Ga2O3 nanoflakes by enhancing the control of the kinetics of chemical vapor deposition process. In the device results, it is shown that the grown nanoflakes have excellent switching properties and potential artificial synaptic response characteristics. Based on this premise, an artificial recognition system for handwritten numerals is developed, achieving a peak recognition accuracy of approximately 96%. This system holds significant potential for application within an emerging neuromorphic recognition framework tailored for advanced driver‐assistance systems. In this work, a new feasible pathway is provided for the synthesis of 2D non‐layered oxides and the potential of 2D oxides in the field of neuroanalog electronics and recognition is shown, thereby advancing the fields of 2D β‐Ga2O3 electronics and 2DMOs electronics.

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Space‐Confined Growth of Ultrathin 2D β‐Ga₂O₃ Nanoflakes for Artificial Neuromorphic Application

Liu,

Yao

et al. 2024

Small Science

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Synthesis and characteristics of a monocrystalline GaAs/β-Ga2O3 p-n heterojunction

Zhou,

Gong,

Sheikhi

et al. 2024

Applied Surface Science

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Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN

Gong,

Su,

Qiu

et al. 2024

Journal of Applied Physics

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The recently demonstrated semiconductor grafting approach allows one to create an abrupt, low interface-trap-density heterojunction between a high-quality p-type single-crystalline semiconductor (non-nitrides) with n-type GaN. However, due to the surface band-bending from GaN polarization, an energy barrier exists at the grafted heterojunction, which can impact the vertical charge carrier transport. Reducing the energy barrier height is essential for some advanced device development. In this work, we employed UV/O3 and O2 plasma to treat a Ga-polar GaN surface with/without an ultrathin (∼2 nm) ALD-Al2O3 coating and studied the effects of the treatments on surface band-bending. Through XPS measurements, it was found that the treatments can suppress the upward band-bending of the Ga-polar GaN by 0.11–0.39 eV. The XPS results also showed that UV/O3 treatment is an effective surface cleaning method with little surface modification, while O2 plasma causes a strong oxidation process that occurs inside the top layer GaN.

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Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) p-n heterojunction determined by X-ray photoelectron spectroscopy

Cited by 6 publications

References 31 publications

Space‐Confined Growth of Ultrathin 2D β‐Ga₂O₃ Nanoflakes for Artificial Neuromorphic Application

Space‐Confined Growth of Ultrathin 2D β‐Ga₂O₃ Nanoflakes for Artificial Neuromorphic Application

Synthesis and characteristics of a monocrystalline GaAs/β-Ga2O3 p-n heterojunction

Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN

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Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) p-n heterojunction determined by X-ray photoelectron spectroscopy

Cited by 6 publications

References 31 publications

Space‐Confined Growth of Ultrathin 2D β‐Ga2O3 Nanoflakes for Artificial Neuromorphic Application

Space‐Confined Growth of Ultrathin 2D β‐Ga2O3 Nanoflakes for Artificial Neuromorphic Application

Synthesis and characteristics of a monocrystalline GaAs/β-Ga2O3 p-n heterojunction

Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN

Contact Info

Product

Resources

About

Space‐Confined Growth of Ultrathin 2D β‐Ga₂O₃ Nanoflakes for Artificial Neuromorphic Application

Space‐Confined Growth of Ultrathin 2D β‐Ga₂O₃ Nanoflakes for Artificial Neuromorphic Application