Band alignment of Cd-free (Zn, Mg)O layer with Cu2ZnSn(S,Se)4 and its effect on the photovoltaic properties

Sengar, Brajendra S.; Garg, Vivek; Kumar, Amitesh; Awasthi, Vishnu; Kumar, Shailendra; Atuchin, Victor V.; Mukherjee, Shaibal

doi:10.1016/j.optmat.2018.08.017

Cited by 55 publications

(16 citation statements)

References 37 publications

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“…In recent years, Cu 2 ZnSn(S,Se) 4 (CZTSSe) thin films have become a new photovoltaic material. CZTSSe films have p-type conductivity, an ideal optical absorption coefficient of about 10 4 cm −1 , and an Eg of 1.0–1.5 eV [ 1 , 2 , 3 , 4 , 5 , 6 ]. At present, through people’s continuous efforts, the PCE of Cu 2 ZnSnS 4 (CZTS) solar cells reached a record 12.6% from 0.66% in 2014 years [ 7 ].…”

Section: Introductionmentioning

confidence: 99%

Insight into the Effect of Selenization Temperature for Highly Efficient Ni-Doped Cu2ZnSn(S,Se)4 Solar Cells

Zeng

Sui

et al. 2022

Nanomaterials

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Cu2Ni0·05Zn0·95Sn(S,Se)4 (CNZTSSe) films were synthesized on Mo-coated glass substrates by the simple sol–gel means combined with the selenization process, and CNZTSSe-based solar cells were successfully prepared. The effects of selenization temperature on the performance and the photoelectric conversion efficiency (PCE) of the solar cells were systematically studied. The results show that the crystallinity of films increases as the selenization temperature raises based on nickel (Ni) doping. When the selenization temperature reached 540 °C, CNZTSSe films with a large grain size and a smooth surface can be obtained. The Se doping level gradually increased, and Se occupied the S position in the lattice as the selenization temperature was increased so that the optical band gap (Eg) of the CNZTSSe film could be adjusted in the range of 1.14 to 1.06 eV. In addition, the Ni doping can inhibit the deep level defect of SnZn and the defect cluster [2CuZn + SnZn]. It reduces the carrier recombination path. Finally, at the optimal selenization temperature of 540 °C, the open circuit voltage (Voc) of the prepared device reached 344 mV and the PCE reached 5.16%.

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Section: Introductionmentioning

confidence: 99%

Insight into the Effect of Selenization Temperature for Highly Efficient Ni-Doped Cu2ZnSn(S,Se)4 Solar Cells

Zeng

Sui

et al. 2022

Nanomaterials

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“…The kesterite Cu 2 ZnSn(S, Se) 4 (CZTSSe) thin-film solar cell is one of the promising candidates for the preparation of high-efficiency thin-film solar cells due to its earth-abundant constituents and suitable physical properties for photovoltaic (PV) applications such as the easily tunable bandgap ( E g ) of 1.0–1.5 eV and realizable optical absorption coefficient of over 10 4 cm –1 in the visible region. − Furthermore, CZTSSe contains only (critical raw materials) CRM-free and nontoxic elements, making it an ideal photovoltaic material. , Thus far, the power conversion efficiency of 12.6% has been achieved using a hydrazine solution . However, there is still a significant performance gap between CZTSSe solar cells and commercially available Cu( In , Ga )Se 2 (CIGS) solar cells owing to the fact the CZTSSe solar cell has a large V OC deficit (defined by E g / q – V OC ). ,, One of the essential elements limiting the V OC enhancement is the more extensive carrier recombination at the CZTSSe/CdS heterointerface, , which is attributed to the larger lattice mismatch and unfavorable conduction band offset (CBO) between the CZTSSe absorber and CdS buffer layer. − …”

Section: Introductionmentioning

confidence: 99%

Doping Behavior of Zn in CdS and Its Effect on the Power Conversion Efficiency of the Cu₂ZnSn(S, Se)₄ Solar Cell

Zhang

Wang

et al. 2021

J. Phys. Chem. C

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High carrier recombination at the Cu2ZnSn (S, Se)4(CZTSSe)/CdS interface is the critical issue that results in the low power conversion efficiency (PCE) of CZTSSe solar cells. To reduce the recombination by optimizing the CZTSSe/CdS interfacial structure, we fabricated a Zn doped CdS (Zn x Cd1 – x S) thin film with x of 0–0.32 and a CZTSSe solar cell with the Zn x Cd1 – x S as the buffer layer. It is found that Zn substitutes for Cd in the x range of 0–0.26 and that some of the Zn substitutes for Cd and another Zn locates in the interstitial site of the CdS lattice in the x range of 0.26–0.32, which make the lattice mismatch between CZTSSe and Zn x Cd1 – x S decrease in x of 0–0.26 and increase in x of 0.26–0.32. The conduction band offset at the CZTSSe/Zn x Cd1 – x S interface is demonstrated by XPS to be a positive ″spike″-like type and increases from 0.11 to 0.43 eV as x increases from 0 to 0.32. PCE is increased from 5.00 to 7.73% by optimizing x. The increased PCE is attributed to increased open-circuit voltage (V OC) and filling factor (FF), while the decreased PCE is due to decreased V OC, FF, and J SC. By using quantitative analysis methods, the increased V OC and FF are mainly attributed to the increased shunt resistance (R sh) and decreased reverse saturation current density (J 0), and the decreased short-circuit current density (J SC) is attributed to the increased conduction band offset (CBO). The influence mechanism of Zn doping on R sh, J 0, and CBO is discussed.

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“…Moreover, Cu 2 ZnSn(S,Se) 4 (CZTSSe) is also an interesting absorber material for thin film solar cells, which could replace the current absorber layers like Cu(In, Ga)(S,Se) 2 (SIGSSe) and CdTe. In this context, a detailed study of band alignment parameters at the interface of n-type MZO and p-type CZTSSe system was investigated by Sengar et al [33], a Cd-free n-type buffer layers with two different Mg-doped ZnO layers (Mg 0.26 Zn 0.74 O, Mg 0.30 Zn 0.70 O) have been examined using ultraviolet photoelectron spectroscopy. In addition, a very recent study was carried about improving the Cu 2-ZnSn(S,Se) 4 -based photovoltaic conversion efficiency by back-contact modification having a low toxicity, natural abundance, outstanding light absorption, and higher theoretical efficiency [33,34].…”

Section: Introductionmentioning

confidence: 99%

First-principles investigations of structural, optoelectronic and thermoelectric properties of Cu-based chalcogenides compounds

et al. 2021

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The structural, electronic, optical and thermoelectric properties of copper-based ternary chalcogenides ACuSe 2 (A = Sc, Y and La) were investigated within the framework of the density functional theory (DFT). The electronic band structures and density of states exhibit that ScCuSe 2 and YCuSe 2 have the indirect band gaps, while LaCuSe 2 displays a direct band gap-type transition. The band structure calculations agree well with other results in the literature. The optical behavior of the studied materials was analyzed in terms of dielectric functions, refractive index, extinction coefficient, absorption coefficient, optical conductivity, reflectivity and energy loss factor. The refractive indices increase to the maximum values of 4.4, 4 and 4.1 at the short infrared and visible wavelengths for ScCuSe 2 , YCuSe 2 and LaCuSe 2 , respectively. Then, they decrease to get a value below 1.0 at the UV wavelengths. Moreover, the material response with temperature was investigated by Seebeck coefficient, figure of merit, specific heat capacity, power factor, thermal conductivity and susceptibility. The high Seebeck effect and large power factor values confirm the efficiency of these materials in thermoelectric energy converter technology. Among the three studied ternary materials, YCuSe 2 has the highest value of dimensionless figure of merit of 0.45 at room temperature. These results would probably provide a new route to the experimentalists for the potential usage and applications of ScCuSe 2 , YCuSe 2 and LaCuSe 2 in thermoelectric and optoelectronic devices.

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Band alignment of Cd-free (Zn, Mg)O layer with Cu2ZnSn(S,Se)4 and its effect on the photovoltaic properties

Cited by 55 publications

References 37 publications

Insight into the Effect of Selenization Temperature for Highly Efficient Ni-Doped Cu2ZnSn(S,Se)4 Solar Cells

Insight into the Effect of Selenization Temperature for Highly Efficient Ni-Doped Cu2ZnSn(S,Se)4 Solar Cells

Doping Behavior of Zn in CdS and Its Effect on the Power Conversion Efficiency of the Cu₂ZnSn(S, Se)₄ Solar Cell

First-principles investigations of structural, optoelectronic and thermoelectric properties of Cu-based chalcogenides compounds

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Band alignment of Cd-free (Zn, Mg)O layer with Cu2ZnSn(S,Se)4 and its effect on the photovoltaic properties

Cited by 55 publications

References 37 publications

Insight into the Effect of Selenization Temperature for Highly Efficient Ni-Doped Cu2ZnSn(S,Se)4 Solar Cells

Insight into the Effect of Selenization Temperature for Highly Efficient Ni-Doped Cu2ZnSn(S,Se)4 Solar Cells

Doping Behavior of Zn in CdS and Its Effect on the Power Conversion Efficiency of the Cu2ZnSn(S, Se)4 Solar Cell

First-principles investigations of structural, optoelectronic and thermoelectric properties of Cu-based chalcogenides compounds

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Product

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About

Doping Behavior of Zn in CdS and Its Effect on the Power Conversion Efficiency of the Cu₂ZnSn(S, Se)₄ Solar Cell