Band alignment at the Cu2ZnSn(SxSe1−x)4/CdS interface

Haight, Richard; Barkhouse, Aaron R.; Gunawan, Oki; Shin, Byungha; Copel, M.; Hopstaken, Marinus; Mitzi, David B.

doi:10.1063/1.3600776

Cited by 264 publications

(200 citation statements)

References 20 publications

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“…It seems also that the electronic structure of a Sn-depleted surface is not favorable for the formation of well working p-n junction [74,93]. The Conduction Band Offset, about 0.4−0.5 eV, is somewhat above the optimal range of 0−0.4 eV and may contribute to lower J sc and fill factor in the CZTSSe devices [126]. Better lattice matching between absorber and buffer could limit recombination at the interface, and using different buffer with smaller lattice such as In 2 S 3 or Zn(S, O, OH) could improve the efficiency of the devices [127,128].…”

Section: Device Propertiesmentioning

confidence: 99%

Kësterite thin films for photovoltaics : a review

2012

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In the years to come, electricity production is bound to increase, and Cu2ZnSn(S, Se)4 (CZTS) compounds, due to their suitability to thin-film solar cells, could be a means to fulfill the demand. After explaining the reasons of the sudden interest of the CIGS scientific community for CZTS solar cells, this paper reviews recent papers published on the subject of kësterites-based solar cells. After a description of crystallographic and optoelectronic properties, including CZTS crystalline structure, defect formation and metal composition, this review paper focuses on CZTS synthesis processes and device properties. Synthesis strategies, including one-or two-step processes, deposition temperature, binary formation control via atmosphere control and their effect on device properties are discussed.

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Section: Device Propertiesmentioning

confidence: 99%

Kësterite thin films for photovoltaics : a review

2012

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“…It should be mentioned here that the conduction band off-set between the n-type CdS window and the CZTSSe (p-type) is significantly smaller (∆E C ∼0.4 eV) than that of the valence band off-set (∆E V ∼ 1.0 eV). 27 Almost similar type of band alignment between CdS and CIGS has also been reported. 28 Therefore, considering the above condition, during EL measurement, as the forward bias flattens the conduction band edge, electrons can easily be injected into the lower gap p-type absorber layers (both in the CZTSSe and the CIGS).…”

Section: Resultsmentioning

confidence: 59%

A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 thin film solar cells

et al. 2016

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A comparative study with focusing on carrier recombination properties in Cu2ZnSn(S,Se)4 (CZTSSe) and the CuInGaSe2 (CIGS) solar cells has been carried out. For this purpose, electroluminescence (EL) and also bias-dependent time resolved photoluminescence (TRPL) using femtosecond (fs) laser source were performed. For the similar forward current density, the EL-intensity of the CZTSSe sample was obtained significantly lower than that of the CIGS sample. Primarily, it can be attributed to the existence of excess amount of non-radiative recombination center in the CZTSSe, and/or CZTSSe/CdS interface comparing to that of CIGS sample. In case of CIGS sample, TRPL decay time was found to increase with the application of forward-bias. This can be attributed to the reduced charge separation rate resulting from the reduced electric-field at the junction. However, in CZTSSe sample, TRPL decay time has been found almost independent under the forward and reverse-bias conditions. This phenomenon indicates that the charge recombination rate strongly dominates over the charge separation rate across the junction of the CZTSSe sample. Finally, temperature dependent VOC suggests that interface related recombination in the CZTSSe solar cell structure might be one of the major factors that affect EL-intensity and also, TRPL decay curves.

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“…In order to determine the precipitation conditions, theoretical simulations were carrying out by HYDRA program (software for creating chemical equilibrium diagrams 4 (1) where M= Cu, Zn…”

Section: Synthesis Proceduresmentioning

confidence: 99%

“…In contrast, the CZTSSe (Cu2ZnSn(S1-x,Sex)4) is an attractive and well suited substitute to CIGS owing to sustainable (CZTS is composed of abundant and non-toxic elements) and low-cost production. Also, the CZTSSe exhibit an optimal and easily adjustable band gap that ranges between 1.1-1.5eV 4 , a large absorption coefficient (>10 4 cm -1 ) at few microns of thickness and the outgoings are lower than in CIGS (In and Ga are replaced by Zn and Sn) .…”

Section: Introductionmentioning

confidence: 99%

Easy and low-cost aqueous precipitation method to obtain Cu2ZnSn(S, Se)4 thin layers

Martí

Lyubenova

Roures

et al. 2017

Solar Energy Materials and Solar Cells

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Abstract:An easy method to obtain kesterite Cu2ZnSn(Se1-x,Sx)4 (CZTSSe) solid solution as an absorber for thin film photovoltaic solar cells is discussed in this report. Particular emphasis is directed toward the procedure´s steps of the CZTSSe preparation, as well as its structure and properties. For the preparation of CZTSSe an easy, low-cost and sustainable aqueous precipitation method that included chemical transformations of metal selenite precipitate, its reduction to metal selenides and further crystallization of kesterite, is applied. This procedure is more viable as avoids the use of selenization treatment and thus generation of toxic vapors and employs water as a solvent instead of organic compounds. In addition, the proposed procedure is very attractive way of preparation for industrial large-scale fabrication of the most promising absorber candidates for photovoltaic thin film solar cells.Kesterite CZTSSe solid solution has been prepared and characterized in terms of chemical composition, structural and morphological transformations, as well as optical and electrical properties, confirming the viability and effectiveness of the applied process.The optimal electrical parameters obtained of the device are 21.5 mA/cm2, 532 mV, 42.8%., and 4.9% to short circuit current (Jsc), open circuit voltage (Voc), fill factor (FF), and efficiency (Eff.) respectively. Detailed description of each procedure steps and full characterization of the products, starting from as-prepared, intermediate and final compound is also exposed that could be very useful for any experimental scientist.2

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Band alignment at the Cu2ZnSn(SxSe1−x)4/CdS interface

Cited by 264 publications

References 20 publications

Kësterite thin films for photovoltaics : a review

Kësterite thin films for photovoltaics : a review

A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 thin film solar cells

Easy and low-cost aqueous precipitation method to obtain Cu2ZnSn(S, Se)4 thin layers

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