2001
DOI: 10.1103/physrevb.63.104428
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Ballistic versus diffusive magnetoresistance of a magnetic point contact

Abstract: The quasiclassical theory of a nanosize point contacts (PC) between two ferromagnets is developed. The maximum available magnetoresistance values in PC are calculated for ballistic versus diffusive transport through the area of a contact. In the ballistic regime the magnetoresistance in excess of few hundreds percents is obtained for the iron-group ferromagnets. The necessary conditions for realization of so large magnetoresistance in PC, and the experimental results by García et al are discussed.PACS numbers:… Show more

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Cited by 50 publications
(64 citation statements)
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“…In contrast, a series of recent experiments on magnetic nanostructures, and particularly nanowires, revealed that the magnetoresistance in the presence of DWs can be as large as several hundreds [4,5] or even thousands [6,7] of percents. These observations have decisive consequences in so far as DWs are controllable efficiently by applying a magnetic field [8] and can also be steered by a spin-polarized electric current [9], meaning that the magnetoresistance of the structure containing DW is controllable via an electric field.The interpretation of the huge magnetoresistance of DWs observed in magnetic semiconductor (in the ballistic quantum regime) relies on the relative sharpness of DWs on the scale set by the wavelength of carriers (electrons or holes) [10,11,12,13,14]. In such a situation spin-dependent scattering of carriers from DWs is greatly enhanced.…”
mentioning
confidence: 99%
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“…In contrast, a series of recent experiments on magnetic nanostructures, and particularly nanowires, revealed that the magnetoresistance in the presence of DWs can be as large as several hundreds [4,5] or even thousands [6,7] of percents. These observations have decisive consequences in so far as DWs are controllable efficiently by applying a magnetic field [8] and can also be steered by a spin-polarized electric current [9], meaning that the magnetoresistance of the structure containing DW is controllable via an electric field.The interpretation of the huge magnetoresistance of DWs observed in magnetic semiconductor (in the ballistic quantum regime) relies on the relative sharpness of DWs on the scale set by the wavelength of carriers (electrons or holes) [10,11,12,13,14]. In such a situation spin-dependent scattering of carriers from DWs is greatly enhanced.…”
mentioning
confidence: 99%
“…The interpretation of the huge magnetoresistance of DWs observed in magnetic semiconductor (in the ballistic quantum regime) relies on the relative sharpness of DWs on the scale set by the wavelength of carriers (electrons or holes) [10,11,12,13,14]. In such a situation spin-dependent scattering of carriers from DWs is greatly enhanced.…”
mentioning
confidence: 99%
“…If domain wall width is shorter than the mean distance between spin-flip scattering d s ϭv F T s , where v F is the Fermi velocity and T s is the spin relaxation time, the spin can be preserved and large MR can be obtained even in the diffusive transport regime. 9 Furthermore, Tagirov et al have predicted that the nanocontact of highly spin-polarized metals such as LSMO and CrO 2 would show very large MR of 1000% or higher. 10 The mean free path l of CrO 2 is about 1.4 nm or less at room temperature, and this was derived from theoretical values of Lewis et al 21 The value is very small compared to that of normal metals, which is in the range of a few tens of nanometers.…”
Section: Gϭgmentioning
confidence: 99%
“…9 and 10. According to the quasiclassical theory of spin transport through magnetic nanocontact given by Tagirov et al, 9,10 large MR can be obtained if strong spin scattering at the DW is achieved for antiparallel alignment of magnetization in the magnetic nanocontact. To realize large spin scattering, the electron spin orientation should be preserved during transit through nanocontacts.…”
Section: Gϭgmentioning
confidence: 99%
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