Ballistic electron transport in macroscopic four-terminal square structures with high mobility

Hirayama, Y.; Saku, T.; Tarucha, Seigo; Horíkoshi, Yoshiji

doi:10.1063/1.104803

Cited by 44 publications

(33 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Ballistic transport is of relevance for realizing electron optics experiments such as Veselago lensing 20 and angle-resolved Klein tunnelling 21 or specular Andreev reflection 22 . A negative bend resistance in a cross geometry 23,24 gives a first indication of ballistic transport. A more sensitive probe, since it is more easily affected by small angle scattering, is transverse magnetic focussing (TMF), seen two decades ago in a GaAs/AlGaAs 2-dimensional electron gas 25 and only recently in exfoliated graphene 26 .…”

mentioning

confidence: 99%

Ballistic transport in graphene grown by chemical vapor deposition

Calado

Zhu

Goswami

et al. 2014

Applied Physics Letters

View full text Add to dashboard Cite

In this letter we report the observation of ballistic transport on micron length scales in graphene synthesised by chemical vapour deposition (CVD). Transport measurements were done on Hall bar geometries in a liquid He cryostat. Using non-local measurements we show that electrons can be ballistically directed by a magnetic field (transverse magnetic focussing) over length scales of ∼ 1 µm. Comparison with atomic force microscope measurements suggests a correlation between the absence of wrinkles and the presence of ballistic transport in CVD graphene.High electronic quality in graphene is a key requirement for many experiments and future applications 1 . The highest quality has so far been achieved in exfoliated graphene 2 , either by suspending the graphene flakes 3 or by depositing them on hexagonal boron nitride (hBN) substrates 4 . To move beyond a laboratory setting, mass production of graphene is essential. Among several promising synthesis methods, chemical vapor deposition (CVD) is a low-cost, scalable and controllable method for the production of monolayer graphene 5,6 . Using CVD, large and predominantly monolayer graphene of high quality has been synthesized on copper foils 7 . Considerable effort has been made to scale up the technology to produce meter-sized foils 8,9 and to achieve crystals with ∼mm dimensions 10-12 . Such large crystal sizes minimize short-range scattering from grain boundaries [13][14][15][16] . Also for CVD graphene, the highest electronic quality is realized by transferring it onto hBN 17,18 , using a clean (contaminant-free) and dry procedure 4,19 .

show abstract

mentioning

confidence: 99%

Ballistic transport in graphene grown by chemical vapor deposition

Calado

Zhu

Goswami

et al. 2014

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…Due to the high charge carrier mobilities ($10 5 cm 2 /Vs) in high quality MIS structures based on pentacene the elastic mean free path of the holes becomes several microns at low temperatures and 'macroscopic' ballistic transport can be expected to be observable similar to modulation doped GaAs/AlGaAs heterostructures [49][50][51][52] or undoped GaAs field-effect transistors (FETs) [53].…”

Section: Ballistic Transportmentioning

confidence: 99%

New Phenomena in High Mobility Organic Semiconductors

Schön¹

2001

phys. stat. sol. (b)

View full text Add to dashboard Cite

Field-effect devices on the basis of high-quality molecular single crystals have been used to study charge transport properties of two-dimensional electron and hole systems in organic semiconductor materials. The improvement of crystalline quality and purity leads to the observation of a variety of new phenomena in these materials, such as the quantum Hall effect, ballistic charge transport, or superconductivity, which are summarized in this article.

show abstract

“…Based on the critical role that two-dimensional multiterminal devices have played in semiconductor nanotechnology, multiterminal graphene devices should also play an important role in any graphenebased electronic circuits [20][21][22]. In addition to the practical importance of these multiterminal graphene devices, these systems make a useful framework to study the effect of lattice defects on the electron transport in the device.…”

Section: Introductionmentioning

confidence: 99%

Lattice vacancy effects on electron transport in multiterminal graphene nanodevices

Jayasekera¹,

Mintmire²

2007

Int J of Quantum Chemistry

View full text Add to dashboard Cite

ABSTRACT:We investigate the effect of single lattice vacancies on the electron transport of graphene nanoribbon devices using the Landauer formalism within a tight binding approach. For a zigzag nanoribbon, a single lattice vacancy creates conductance dips in the low energy region, due to quasi bound states around the vacancy site. The energy of the bound state is related to the position of the lattice vacancy relative to the edge of the ribbon. We carried out calculations of electron transport properties in a T-junction device with lattice vacancies. We find that the effect of the vacancies depends on how energetically favorable the lattice vacancy is, which can be studied in terms of the alternate atomic structure of the graphene lattice.

show abstract

Ballistic electron transport in macroscopic four-terminal square structures with high mobility

Cited by 44 publications

References 11 publications

Ballistic transport in graphene grown by chemical vapor deposition

Ballistic transport in graphene grown by chemical vapor deposition

New Phenomena in High Mobility Organic Semiconductors

Lattice vacancy effects on electron transport in multiterminal graphene nanodevices

Contact Info

Product

Resources

About