2018
DOI: 10.1016/j.apcatb.2018.06.042
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Ball-flower like NiO/g-C3N4 heterojunction for efficient visible light photocatalytic CO2 reduction

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Cited by 278 publications
(81 citation statements)
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“…The Fermi level of an n-type semiconductor lies just below the conduction band, while for a p-type semiconductor it lies just above the valence band. 37,38 Consequently, the Fermi level (at-band potential) of a p-type catalyst is close to the VB while that of an n-type sample is located near the CB, which was also demonstrated for porous few-layer carbon nitride by Xiao et al 36 and a NiO/g-C 3 N 4 heterojunction by Tang et al 39 Therefore, the potentials of the VB of MAPbBr 3 are calculated to be $1.1 eV by subtracting the optical band gap (2.13 eV) from the CBM, which is in reasonably good agreement with those reported by Li et al 33 and Samu et al 34 Additionally, the at-band potential of p-g-C 3 N 4 -Sol was measured to be À1.34 V versus Ag/AgCl, which is similar to the value of ultrathin g-C 3 N 4 (À1.32 V vs. Ag/AgCl) 36 and slightly smaller than the value (À1.43 V) reported by Wang et al So, the potentials of the VB of p-g-C 3 N 4 are calculated to be $1.4 eV by subtracting the optical band gap (2.7 eV) 16,20 from the CB, which is slight bigger than that of MAPbBr 3 (1.1 eV).…”
Section: Electrochemical Analysis Of Mapbbr 3 /P-g-c 3 Nmentioning
confidence: 67%
See 1 more Smart Citation
“…The Fermi level of an n-type semiconductor lies just below the conduction band, while for a p-type semiconductor it lies just above the valence band. 37,38 Consequently, the Fermi level (at-band potential) of a p-type catalyst is close to the VB while that of an n-type sample is located near the CB, which was also demonstrated for porous few-layer carbon nitride by Xiao et al 36 and a NiO/g-C 3 N 4 heterojunction by Tang et al 39 Therefore, the potentials of the VB of MAPbBr 3 are calculated to be $1.1 eV by subtracting the optical band gap (2.13 eV) from the CBM, which is in reasonably good agreement with those reported by Li et al 33 and Samu et al 34 Additionally, the at-band potential of p-g-C 3 N 4 -Sol was measured to be À1.34 V versus Ag/AgCl, which is similar to the value of ultrathin g-C 3 N 4 (À1.32 V vs. Ag/AgCl) 36 and slightly smaller than the value (À1.43 V) reported by Wang et al So, the potentials of the VB of p-g-C 3 N 4 are calculated to be $1.4 eV by subtracting the optical band gap (2.7 eV) 16,20 from the CB, which is slight bigger than that of MAPbBr 3 (1.1 eV).…”
Section: Electrochemical Analysis Of Mapbbr 3 /P-g-c 3 Nmentioning
confidence: 67%
“…Consequently, the space charge region called the internal electric eld in p-n heterojunctions is established when the electrons and holes accumulate until reaching an equilibrium, which could acts as a potential barrier to decrease the electron-hole pair recombination. 39 Based on the Mott-Schottky (MS) analysis, the corresponding inverted type-I band conguration structure alignments of MAPbBr 3 and p-g-C 3 N 4 are schematically depicted in Fig. 10.…”
Section: Electrochemical Analysis Of Mapbbr 3 /P-g-c 3 Nmentioning
confidence: 99%
“…The C 1s peak from pure NiO is due to the adventitious carbon. 33 The presence of a peak of N 1s in the spectrum of the Ni/CN-10 composite means that g-C 3 N 4 is successfully incorporated into NiO. The corresponding high-resolution (HR) spectra of C 1s, N 1s, O 1s, and Ni 2p are also shown in Figure 2, respectively.…”
Section: Resultsmentioning
confidence: 93%
“…Based on the following formula, the unit of V fb was converted from V vs Ag/AgCl to the normal hydrogen electrode (NHE) potential. 42 …”
Section: Resultsmentioning
confidence: 99%