Bacteria electrical detection using 3D silicon nanowires based resistor

Borgne, Brice Le; Pichon, Laurent; Salaün, Anne‐Claire; Bihan, Baptiste Le; Jolivet‐Gougeon, Anne; Sophie., Martin; Rogel, Régis; Sagazan, Olivier de

doi:10.1016/j.snb.2018.07.101

Cited by 19 publications

(7 citation statements)

References 32 publications

(33 reference statements)

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“…5a served as reference to control the binding of bacteria with antibodies. The curve is quasi-symmetrical with a non-ohmic behaviour at low voltages, as previously observed in a preliminary study with similar resistors for E. coli detection for yes/no diagnosis, for which no functionalization of silicon nanowires was performed (Le Borgne et al, 2018). This behaviour is related to the electrical model of the global electrical resistance (Rtot) of the resistor (Fig.…”

Section: Electrical Measurements Before E Coli Immobilizationsupporting

confidence: 75%

“…Interconnected nanowires ensure electrical contact between the two doped polycrystalline silicon electrodes SiNWs (Pichon et al, 2015). In order to optimise the detection of bacteria, the electrodes were made with a higher number of teeth per unit area than the previous reported structures ( Le Borgne et al, 2018), as shown on Scanning Electron Microscopy (SEM) images (Fig. 1d).…”

Section: Fabrication Of Interdigitated Sinws Electrode Arraysmentioning

confidence: 99%

“…Previous studies demonstrated the interesting capacities of these high-sensitivity sensors based on SiNWs for the detection of low protein concentrations (Cui, 2001) (Kim et al, 2016), gas detection (Chen et al, 2012) (Ni et al, 2013) (Qin et al, 2018) (Yun et al, 2019), detection of DNA strands by nucleic acid hybridization (Cui, 2001) (Midahuen et al, 2022), bacteria (Liao et al, 2019) and SARS-CoV-2 (Gao et al, 2022). Recently, in a previous study carried out by our group, the detection of Escherichia coli (E. coli) using inter-digitated comb resistors based on non-functionalized silicon nanowires for yes/no diagnosis was demonstrated (Le Borgne et al, 2018). But, in this configuration, the weak point of the sensor was the specific detection and the accurate control of bacterial concentration.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Silicon nanowires-based biosensors for the electrical detection of Escherichia coli

Benserhir¹,

Salaün²,

Geneste

et al. 2022

Biosensors and Bioelectronics

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Section: Electrical Measurements Before E Coli Immobilizationsupporting

confidence: 75%

Section: Fabrication Of Interdigitated Sinws Electrode Arraysmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Silicon nanowires-based biosensors for the electrical detection of Escherichia coli

Benserhir¹,

Salaün²,

Geneste

et al. 2022

Biosensors and Bioelectronics

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“…Moreover, gold does not oxidize, increasing its catalytic activity. Gold-catalyzed SiNWs are well controlled and already integrated into prototypes such as transistors [23], biosensors [24], and photo-anodes [25].…”

Section: Indium As Catalyst For Silicon Nanowires' Growthmentioning

confidence: 99%

Investigation of Indium Oxide Effect on Indium Particles Properties Used as Silicon Nanowires Catalyst

Zaghouani¹

2021

Post-Transition Metals

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In this chapter, we investigate on indium particles elaboration by different annealing processes: rapid thermal annealing (RTA) and conventional processes. The elaborated particles are dedicated to be used as catalyst for silicon nanowires' (SiNWs) growth by vapor-liquid-solid (VLS) process. The annealing parameters effect on indium particles properties is studied. After conventional annealing, the indium layer is cracked into elongated and inhomogeneous islands of micrometric sizes. XRD analysis depicts, in addition to pure indium planes, the presence of new peaks attributed to indium oxide (In 2 O 3) planes formed during annealing. After hydrogen treatment with a flow rate of 60 sccm during 10 min, some In 2 O 3 peaks are eliminated and replaced by new indium peaks, explaining the amelioration of indium particles morphology. These formed particles have been used as catalyst for SiNWs' growth. A low density of SiNWs is obtained, attributed to In 2 O 3 persistence, decreasing the indium catalytic effect. Quasi-spherical and homogeneously distributed indium particles with an average size of 422 nm are successfully grown in one step by the RTA process during short time (5 min) at lower temperature (450°C). XRD analysis shows the absence of indium oxide in the contrary to those formed by the conventional furnace. SiNWs with higher density are obtained, highlighting the harmful role of indium oxide.

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“…Cordoba et al [18] fabricated tunnel junction using doped n-type and p-type SiNW grown by VLS mechanism. Some group [19] found that bacteria could be detected through the drastic reduction of resistance of doped SiNW in contact with bacteria. Ahmed et al [20] fabricated high performance radial junction solar cell using doped SiNW grown via VLS mechanism using plasma-enhanced chemical vapor deposition (PECVD).…”

Section: Introductionmentioning

confidence: 99%

Fabrication of pn junction arrays with highly successful grown n-Si microneedles by using low temperature VLS method

Islam¹,

Hussain²,

Alkhateeb³

2021

J. Micromech. Microeng.

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Arrays of pn junctions have been fabricated with n-Si microneedles. In situ doping vapor–liquid–solid (VLS) growth has been carried out with p-Si substrate having metallic catalyst (Au) dots on its surface, using Si2H6 and PH3 for supplying Si and phosphorus to fabricate n-Si microneedles on the surface of p-Si substrate in vertical direction; thus, pn junctions have been fabricated at microneedle-substrate interface. These n-Si microneedles have been grown at the temperature of 680 °C, which is about 420 °C less than the temperature (at least 1100 °C) required by conventional diffusion method of doping. In this work, n-Si microneedles have been successfully fabricated with 100% yield, the highest success ever for n-type VLS growth in micro range. The position and size of these n-Si microneedles are controllable. These n-Si microneedles are highly conductive. Physical and electrical characteristics of n-Si microneedles have been investigated by varying Au dot size and the level of phosphorus doping. The properties of interface pn junction have been investigated and compared with standard diode characteristics and theoretical results. Highly conductive n-Si microneedle arrays, embedded with interface pn junctions, might be used for collecting and processing bio-signals, profiling temperature/pressure inside living cells and many other sensor applications.

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Bacteria electrical detection using 3D silicon nanowires based resistor

Abstract: This device offers promising potentialities taking advantages of integration into CMOS 2 platform for alternative direct electrical detection of bacteria to monitor the contamination in environment for hygiene applications.

Cited by 19 publications

References 32 publications

Silicon nanowires-based biosensors for the electrical detection of Escherichia coli

Silicon nanowires-based biosensors for the electrical detection of Escherichia coli

Investigation of Indium Oxide Effect on Indium Particles Properties Used as Silicon Nanowires Catalyst

Fabrication of pn junction arrays with highly successful grown n-Si microneedles by using low temperature VLS method

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