1997
DOI: 10.1134/1.1258667
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Backscattering of low-energy (0–8 eV) electrons by a silicon surface

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Cited by 6 publications
(2 citation statements)
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“…Recent measurements by Shpenik et al [32] show that electron reflection at a surface increases steeply at the low particle energies of interest here, and the reflection coefficient is influenced by the properties of adsorbed gas layers. If these properties change, the attendant variation in electron reflection will alter the average number of transits an electron will make in the inter-electrode space before being absorbed by an electrode.…”
Section: Discussionmentioning
confidence: 72%
“…Recent measurements by Shpenik et al [32] show that electron reflection at a surface increases steeply at the low particle energies of interest here, and the reflection coefficient is influenced by the properties of adsorbed gas layers. If these properties change, the attendant variation in electron reflection will alter the average number of transits an electron will make in the inter-electrode space before being absorbed by an electrode.…”
Section: Discussionmentioning
confidence: 72%
“…But as we have shown, there obviously are circumstances where such treatments may need to take reflection into account. Particularly if the impact energy is low, the reflection coefficient can be quite large [16]. Depending on the conditions of reflection, a returning electron can orbit through the cathode region a number of times, and in doing so, it can significantly contribute to the space charge density there.…”
Section: Summary and Discussionmentioning
confidence: 99%