The parameters governing electron backscattering from thin films and from bulk solids are reviewed: Atomic scattering cross‐section, atomic number, single/multiple scattering, film thickness, scattering angular distribution, angle of incidence, diffraction effects. Their influence on some important contrast mechanisms due to backscattered electrons in scanning electron microscopy (thickness contrast, Z/material contrast, tilting/topography contrast, crystal orientation contrast) is discussed. The most frequently used backscattering electron detection systems are briefly described.