Backscatter WERS for trace chemical analyte detection using a handheld spectrometer

Tyndall, Nathan F.; Kozak, Dmitry A.; Pruessner, Marcel W.; McGill, R. Andrew; Roberts, Courtney; Stievater, Todd H.; Miller, Benjamin L.; Luta, Ethan P.; Yates, Matthew Z.; Emmons, Erik D.; Wilcox, Phillip G.; Guicheteau, Jason A.

doi:10.1117/12.2559641

Cited by 7 publications

(4 citation statements)

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“…Although the spectroscopy demonstrations required an off-chip spectrometer, many efforts are underway to develop integrated spectrometers 22,[44][45][46] in silicon and silicon nitride platforms. It is also important to note that compact, uncooled, or thermoelectrically-cooled spectrometers are now available with very similar performance as benchtop liquid-nitrogen cooled systems 47 . In fact, our measurements of the reverse-bias HCE spectra with a handheld spectrometer show nearly identical signal and signalto-noise as that obtained in the benchtop system described above (Supplementary Information, Spectrometer Comparison).…”

Section: Discussionmentioning

confidence: 99%

Broadband near-infrared emission in silicon waveguides

Pruessner,

Tyndall,

Khurgin

et al. 2024

Nat Commun

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Silicon photonic integrated circuit foundries enable wafer-level fabrication of entire electro-optic systems-on-a-chip for applications ranging from datacommunication to lidar to chemical sensing. However, silicon’s indirect bandgap has so far prevented its use as an on-chip optical source for these systems. Here, we describe a fullyintegrated broadband silicon waveguide light source fabricated in a state-of-the-art 300-mm foundry. A reverse-biased p-i-n diode in a silicon waveguide emits broadband near-infrared optical radiation directly into the waveguide mode, resulting in nanowatts of guided optical power from a few milliamps of electrical current. We develop a one-dimensional Planck radiation model for intraband emission from hot carriers to theoretically describe the emission. The brightness of this radiation is demonstrated by using it for broadband characterization of photonic components including Mach-Zehnder interferometers and lattice filters, and for waveguide infrared absorption spectroscopy of liquid-phase analytes. This broadband silicon-based source can be directly integrated with waveguides and photodetectors with no change to existing foundry processes and is expected to find immediate application in optical systems-on-a-chip for metrology, spectroscopy, and sensing.

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Section: Discussionmentioning

confidence: 99%

Broadband near-infrared emission in silicon waveguides

Pruessner,

Tyndall,

Khurgin

et al. 2024

Nat Commun

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“…Waveguide-enhanced Raman spectroscopy (WERS) 1,2 has been used to demonstrate the detection of vaporphase chemicals such as organophosphonates 3,4 and liquid-phase targets such as biomarkers in water. [5][6][7] Recent advances have included the use of 300-mm photonic integrated circuit (PIC) foundries for fabrication and assembly 8 (AIM Photonics), the use of handheld spectrometers, 9 the design and verification of on-chip Raman filters, 10 and the demonstration of low-loss fiber coupling to PIC edge coupling. 11 These demonstrations have typically used excitation wavelengths of 1064 nm or 785 nm with silicon nitride waveguides.…”

Section: Introductionmentioning

confidence: 99%

“…1a, a typical WERS system comprises a laser source, a sensing PIC, and a spectrometer, connected by (at present) single-mode polarization-maintaining optical fibers. [9][10][11] Broadband lattice filters, 10 placed at the input and output of the sensing spiral, serve as integrated waveguide versions of dichroic bulk optical filters by removing background emission from the connected fibers and enabling the efficient collection of forward-and back-scattered WERS signal. Since WERS spectra can extend over 1600 cm −1 from the laser frequency, components for a 633 nm laser need to operate out to at least 700 nm (the orange/red bands), and components for a 785 nm laser need to operate out to at least 900 nm (the I/Z bands).…”

Section: Introductionmentioning

confidence: 99%

Waveguide-enhanced Raman spectroscopy using visible laser excitation

Tyndall

Emmons

Pruessner

et al. 2023

Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XXIV

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Waveguide-enhanced Raman spectroscopy (WERS) using nanophotonic waveguides has been used to demonstrate the detection of vapor-phase chemicals and liquid-phase biomolecules in water. The technique benefits from the fabrication processes and tolerances of CMOS foundries, but successful foundry-based WERS photonic integrated circuits (PICs) have only been demonstrated using excitation wavelengths of 1064 nm and 785 nm. Foundrybased PICS are beginning to operate with low loss at visible wavelengths, and WERS is uniquely poised to take advantage of this capability. Raman scattering cross-sections scale as λ −4 , so a visible WERS platform could enable increased sensitivity, decreased exposure times, and/or decreased laser powers. However, increased fluorescence, increased waveguide loss, and decreased feature sizes make WERS in the visible challenging. Here, we demonstrate WERS using 300-mm foundry-based fabrication (AIM Photonics) with 633 nm and 785 nm laser excitation. We also show the successful operation and integration of other required components for a compact WERS system operating in the visible, including edge-couplers and lattice filters.

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“…A wide range of applications have been shown, ranging from Raman spectroscopy [8][9][10] to fluorescence imaging [11]. For sensing applications, integrated photonics can offer signal enhancement [8], size reductions [12] and many other benefits. High refractive index materials are of particular interest as they offer high sensitivity in smaller footprints [13].…”

Section: Introductionmentioning

confidence: 99%

Study of waveguide background at visible wavelengths for on-chip nanoscopy

Coucheron

Helle²,

Wilkinson

et al. 2021

Opt. Express

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On-chip super-resolution optical microscopy is an emerging field relying on waveguide excitation with visible light. Here, we investigate two commonly used high-refractive index waveguide platforms, tantalum pentoxide (Ta2O5) and silicon nitride (Si3N4), with respect to their background with excitation in the range 488-640 nm. The background strength from these waveguides were estimated by imaging fluorescent beads. The spectral dependence of the background from these waveguide platforms was also measured. For 640 nm wavelength excitation both the materials had a weak background, but the background increases progressively for shorter wavelengths for Si3N4. We further explored the effect of the waveguide background on localization precision of single molecule localization for direct stochastic optical reconstruction microscopy (dSTORM). An increase in background for Si3N4 at 488 nm is shown to reduce the localization precision and thus the resolution of the reconstructed images. The localization precision at 640nm was very similar for both the materials. Thus, for shorter wavelength applications Ta2O5 is preferable. Reducing the background from Si3N4 at shorter wavelengths via improved fabrication will be worth pursuing.

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Backscatter WERS for trace chemical analyte detection using a handheld spectrometer

Cited by 7 publications

References 0 publications

Broadband near-infrared emission in silicon waveguides

Broadband near-infrared emission in silicon waveguides

Waveguide-enhanced Raman spectroscopy using visible laser excitation

Study of waveguide background at visible wavelengths for on-chip nanoscopy

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