Background Limited Performance of Long Wavelength Infrared Focal Plane Arrays Fabricated From M-Structure InAs–GaSb Superlattices

Delaunay, Pierre Yves; Nguyen, Binh Minh; Hoffman, Darin; Huang, Edward Kwei Wei; Razeghi, Manijeh

doi:10.1109/jqe.2008.2002667

Cited by 70 publications

(38 citation statements)

References 15 publications

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“…To this end combination of bulk and superlattice barriers with superlattice absorbers are being intensively studied. [6][7][8][9][10][11] Lattice matching using appropriate material combinations with favorable conduction band offsets for both electrons and holes is possible. A unipolar barrier with band gap larger than that of the absorber region reduces diffusion currents while maintaining the photocurrent level.…”

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confidence: 99%

“…8 Klipstein et al demonstrated an XBn design reaching blip temperature of 160 C and quantum efficiency of 70% with cutoff wavelength of 4.1 lm. 9 Further, complex supercells containing designs like "W" structure 10 and "M" structure 11 have been introduced as bipolar barriers with various degrees of performance. Besides reducing the dark current and increasing the differential resistance-area product, "M" design also aims to increase the overlap integral between electron and hole wavefuntions, intending to attain higher optical absorption.…”

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confidence: 99%

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“N” structure for type-II superlattice photodetectors

et al. 2012

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confidence: 99%

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confidence: 99%

“N” structure for type-II superlattice photodetectors

et al. 2012

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“…The M-structure comprises a thin AlSb barrier inserted in the center of a GaSb layer in a type II binary InAs/GaSb superlattice [13]. The high bandgap AlSb layer effectively blocks the electron and hole dark currents, thereby improving the R 0 A and D* performance in type II InAs/GaSb LWIR photodiodes [92]. The large carrier effective mass associated with the InAs/GaSb material in M-structure detectors has been shown to provide more freedom in tuning the bandgap compared to other type II SLS designs [93].…”

Section: M-structurementioning

confidence: 99%

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Sood¹,

Zeller²,

Welser³

et al. 2018

Two-Dimensional Materials for Photodetector

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The implementation of strained layer superlattices (SLS) for detection of infrared (IR) radiation has enabled compact, high performance IR detectors and two-dimensional focal plane arrays (FPAs). Since initially proposed three decades ago, SLS detectors exploiting type II band structures existing in the InAs/GaSb material system have become integral components in high resolution thermal detection and imaging systems. The extensive technological progress occurring in this area is attributed in part to the band structure flexibility offered by the nearly lattice-matched InAs/AlSb/Ga(In)Sb material system, enabling the operating IR wavelength range to be tailored through adjustment of the constituent strained layer compositions and/or thicknesses. This has led to the development of many advanced type II SLS device concepts and architectures for low-noise detectors and FPAs operating from the short-wavelength infrared (SWIR) to very long-wavelength infrared (VLWIR) bands. These include double heterostructures and unipolar-barrier structures such as graded-gap M-, W-, and N-structures, nBn, pMp, and pBn detectors, and complementary barrier infrared detector (CBIRD) and pBiBn designs. These diverse type II SLS detector architectures have provided researchers with expanded capabilities to optimize detector and FPA performance to further benefit a broad range of electrooptical/IR applications.

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“…The Type-II strained layer superlattice (SLS) can potentially replace HgCdTe for sensitive long wavelength infrared (LWIR) detector applications [1][2][3][4] that require photoresponse in the range of 9 lm and longer. The Type-II SLS exhibits a narrow effective bandgap because of the offset band alignment of the constituent compounds [1].…”

Section: Introductionmentioning

confidence: 99%