Backcontact CdSe/CdTe windowless solar cells

Kim, Donguk; Hangarter, Carlos M.; Debnath, Ratan; Ha, Ji Yong; Beauchamp, Carlos; Widstrom, Matthew; Guyer, Jonathan E.; Nguyen, Nhan V.; Yoo, Bongyoung; Josell, Daniel

doi:10.1016/j.solmat.2012.11.007

Cited by 25 publications

(29 citation statements)

References 39 publications

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“…4, 7 The shape of the experimental EQE in Fig. 2b is similar to earlier experimental results for CdSe/CdTe devices 7–8 but at higher values that are consistent with the increased J sc . Comparison to the earlier simulations suggests a corresponding increase of carrier lifetime from a low 10 −11 s value to a value near 10 −10 s (Ref.…”

Section: Resultssupporting

confidence: 87%

Windowless CdSe/CdTe Solar Cells with Differentiated Back Contacts: J–V, EQE, and Photocurrent Mapping

Josell

Debnath

et al. 2014

ACS Appl. Mater. Interfaces

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This paper presents a study of windowless CdSe/CdTe thin film photovoltaic devices with in-plane patterning at a submicrometer length scale. The photovoltaic cells are fabricated upon two interdigitated comb electrodes pre-patterned at micrometer length scale on an insulating substrate. CdSe is electrodeposited on one electrode, and CdTe is deposited by pulsed laser deposition over the entire surface of the resulting structure. Previous studies of symmetric devices are extended in this study. Specifically, device performance is explored with asymmetric devices having fixed CdTe contact width and a range of CdSe contact widths, the devices also fabricated with improved dimensional tolerance. Scanning photocurrent microscopy (aka, laser beam induced current mapping) is used to examine local current collection efficiency, providing information on the spatial variation of performance that complements current-voltage and external quantum efficiency measurements of overall device performance. Modeling of carrier transport and recombination indicates consistency of experimental results for local and blanket illumination. Performance under simulated air mass 1.5 illumination exceeds 5% for all dimensions examined with the best performing device achieving 5.9 % efficiency.

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Section: Resultssupporting

confidence: 87%

Windowless CdSe/CdTe Solar Cells with Differentiated Back Contacts: J–V, EQE, and Photocurrent Mapping

Josell

Debnath

et al. 2014

ACS Appl. Mater. Interfaces

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“…The difference between the energy bandgaps of the CdSe and InSe/CdSe interface Δ E g is 0.33 eV. Recalling that the electron affinity of InSe is 4.55 eV and that of CdSe is 4.58 eV , the conduction‐band offset (

Δ E_{c} = q χ_{CdSe} - q χ_{InSe}

) is 0.03 eV. The valence‐band offset turns out to be

Δ E_{v} = Δ E_{g} - Δ E_{c}

= 0.36 eV for the InSe/CdSe heterojunction.…”

Section: Resultsmentioning

confidence: 97%

Optical interactions in the InSe/CdSe interface

Qasrawi

Rabbaa

2015

Phys. Status Solidi B

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In this work, the structural and optical properties of the InSe/ CdSe heterojunction are investigated by means of X-ray diffraction and ultraviolet-visible light spectrophotometry techniques. The hexagonal CdSe films that were deposited onto amorphous InSe and onto glass substrates at a vacuum pressure of 10 À5 mbar, exhibited interesting optical characteristics. Namely, the absorption, transmission, and reflection spectra that were recorded in the incident light wavelength range of 300-1100 nm, for the InSe, CdSe, and InSe/CdSe interface revealed direct allowed transition energy bandgaps of 1.44, 1.85, and 1.52 eV, respectively. The valence-band offset for the interface is found to be 0.36 eV. On the other hand, the dielectric constant spectral analysis displayed a large increase in the real part of the dielectric constant associated with decreasing frequency below 500 THz. In addition, the optical conductivity spectra that were analyzed and modeled in accordance with the Drude theory displayed a free-carrier average scattering time of 0.4 fs and a drift mobility of 6.65 cm 2 V À1 s À1 for the InSe/CdSe interface. The features of this interface nominate it as a promising member for the production of optoelectronic Schottky channels and as thinfilm transistors. 1 Introduction Owing to the remarkable optical properties they exhibit [1][2][3][4][5][6][7], the cadmium selenide and InSe thin films are attractive materials in optoelectronic technology. The quantum dot-sensitized solar cells (QDSCs) of CdSe displayed high power conversion efficiency of 3.26 AE 0.10% under one sun illumination [2]. In addition, the ZnTe/CdSe QD-based QDSCs showed a champion power conversion efficiency of 7.17% and an efficiency of 6.82% under one full sun illumination [3]. Moreover, the CdTe/ CdSe nanocrystal (NC) solar cells with the inverted structure (ITO/ZnO/CdSe/CdTe/Au) that had been fabricated by the simple solution process coupled with the layer-by-layer sintering technique displayed an annealing strategydependent device performance [4]. The efficiency of these NC devices reached 5.81% at an annealing temperature of 340 8C. Furthermore, very small size (3-5 nm) particles of zinc-blende cadmium selenide nanocrystals modified with oleic acid showed an NC solar cell efficiency of $1.08% [5]. The most beneficial property of the last two types is the ability of preparation from solutions.On the other hand, the n-InSe/p-Si heterojunction is reported to exhibit a photovoltaic characteristic with a

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“…ðDebye Sherrer 0 s formulaÞ (1) where K (~0.9) is a dimensionless shape factor and b is the full width at half maxima (FWHM).…”

Section: Methodsmentioning

confidence: 99%

Effect of Se concentration on mixed phonon modes and spin orbit splitting in thermally evaporated CdSxSe1−x (0 ≤ x ≤ 1) films using CdS–CdSe nano-composites

Zuala

Agarwal

2015

Materials Chemistry and Physics

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Backcontact CdSe/CdTe windowless solar cells

Cited by 25 publications

References 39 publications

Windowless CdSe/CdTe Solar Cells with Differentiated Back Contacts: J–V, EQE, and Photocurrent Mapping

Windowless CdSe/CdTe Solar Cells with Differentiated Back Contacts: J–V, EQE, and Photocurrent Mapping

Optical interactions in the InSe/CdSe interface

Effect of Se concentration on mixed phonon modes and spin orbit splitting in thermally evaporated CdSxSe1−x (0 ≤ x ≤ 1) films using CdS–CdSe nano-composites

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