Back‐End‐of‐Line SiC‐Based Memristor for Resistive Memory and Artificial Synapse (Adv. Electron. Mater. 9/2022)

Abstract

SiC Based Memristor for Resistive Memory and Artificial Synapse In article number 2200312, Ruomeng Huang and co‐workers develop a back‐end‐of‐line material SiC based two‐terminal memristor as artificial synapse to faithfully emulate several vital synaptic functions of human brain. This work presents an important advance in SiC based memristor and its application in both memory and neuromorphic computing.

All‐Optical Excitatory and Inhibitory Synapses Based on Reversible Photo‐Induced Phase Transition in Single‐Crystal CsPbBr3 Perovskite

“…In accordance with Ebbinghaus' forgetting curve, the process of forgetting commences promptly following a learning event, necessitating multiple rehearsal processes to effectively solidify memorization. [ 36 ] As a representative of LTP, the “learning‐forgetting‐rehearsal” process was mimicked by the artificial synapse in Figure 6d. To simulate the learning‐forgetting‐relearning process, a light pulse (405 nm, 8 s) was first applied to simulate the initial learning process, causing an augmented optical EPSP change (synapse weight).…”

A Digital−Analog Bimodal Memristor Based on CsPbBr3 for Tactile Sensory Neuromorphic Computing

“…The explosive growth of data and information has driven the necessity for highly dense information bit storage and fast computing electronics. [ 1 ] Despite great efforts have been made to improve the computing capability and efficiency of von Neumann computers, the constant data shuttling between the physically separated computing and memory units would inevitably consume huge energy and induce latency in the data transmission process. [ 2–4 ] Inspired by the neural network system of human brain, several electronic devices toward logic‐in‐memory have been well proposed and developed.…”