Back bias modulation of UTBB FDSOI, bulk FinFET, and SOI FinFET

Chang, Wen-Teng; Lin, Shiuan Huei; Shih, Cheng-Ting; Yeh, Wen–Kuan

doi:10.1109/inec.2016.7589260

Cited by 9 publications

(1 citation statement)

References 5 publications

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“…Thus the body bias techniques is not applicable to FinFET circuit design anymore. 38 To validate the above argument, we apply both reverse and forward body bias to a 2-finger transistor and simulate the ON current for both 1 × nm and 7 nm nodes, with the results are shown in Figure 10. The ON current doesn't change with the body voltage, as expected, and it indicates that FinFET devices are largely insensitive to the body effect.…”

Section: Body Effectmentioning

confidence: 96%

Back to the Future: Digital Circuit Design in the FinFET Era

Guo¹,

Verma²,

Gonzalez-Guerrero³

et al. 2017

Journal of Low Power Electronics

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It has been almost a decade since FinFET devices were introduced to full production; they allowed scaling below 20 nm, thus helping to extend Moore's law by a precious decade with another decade likely in the future when scaling to 5 nm and below. Due to superior electrical parameters and unique structure, these 3-D transistors offer significant performance improvements and power reduction compared to planar CMOS devices. As we are entering into the sub-10 nm era, FinFETs have become dominant in most of the high-end products; as the transition from planar to FinFET technologies is still ongoing, it is important for digital circuit designers to understand the challenges and opportunities brought in by the new technology characteristics. In this paper, we study these aspects from the device to the circuit level, and we make detailed comparisons across multiple technology nodes ranging from conventional bulk to advanced planar technology nodes such as Fully Depleted Silicon-on-Insulator (FDSOI), to FinFETs. In the simulations we used both state-of-art industry-standard models for current nodes, and also predictive models for future nodes. Our study shows that besides the performance and power benefits, FinFET devices show significant reduction of short-channel effects and extremely low leakage, and many of the electrical characteristics are close to ideal as in old long-channel technology nodes; FinFETs seem to have put scaling back on track! However, the combination of the new device structures, double/multi-patterning, many more complex rules, and unique thermal/reliability behaviors are creating new technical challenges. Moving forward, FinFETs still offer a bright future and are an indispensable technology for a wide range of applications from high-end performance-critical computing to energy-constraint mobile applications and smart Internet-of-Things (IoT) devices.

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Section: Body Effectmentioning

confidence: 96%