Ba(Zr Ti1−)O3 thin films for tunable microwave applications

All-Inorganic Flexible Embedded Thin-Film Capacitors for Dielectric Energy Storage with High Performance

“…Under the measurement temperature from 0 to 200 °C, the flat and stable tendency for both the ε r – T and tan δ− T can be seen, which provides the good temperature stability of dielectric properties for the BZT capacitors. This phenomenon of the BZT capacitor can be ascribed to the unrelaxed strain, the local polarization, and the influence from the interfaces of the films. − The similar results have been reported for the BaZr x Ti 1– x O 3 films. ,,, Besides, the modified Curie–Weiss law was applied to further explore the relaxor behavior of the BZT films as the following where T m is the temperature corresponding to the permittivity maximum (ε m ); γ is the degree of relaxation; and C is a constant. As shown in Figure S-5b,c, the γ = 1.96 was obtained by fitting the ln­(1/ε – 1/ε m ) versus ln­( T – T m ) for BZT films at 10 kHz, which further confirmed the relaxor ferroelectric behavior for the BZT films.…”

“…55−57 The similar results have been reported for the BaZr x Ti 1−x O 3 films. 39,51,55,58 Besides, the modified Curie−Weiss law was applied to further explore the relaxor behavior of the BZT films as the following 59…”

Effect of annealing temperature on energy storage performance of Ba(Zr0.35Ti0.65)O3 thin films under pure oxygen

“…Compared with conventional ferroelectric materials, relaxor ferroelectric retains higher saturation polarization strength, lower residual polarization, and increasing breakdown electric field, which are greatly conducive to obtaining excellent energy storage performance. 4,5 It is found that Ba(Zr x Ti 1Àx )O 3 (BZT), obtained by the B-site substitution of BaTiO 3 , [6][7][8][9] can effectively lessen the leakage current density and residual polarization, while increasing the breakdown field strength. [10][11][12] With the increase of Zr content, BZT can be transformed from ferroelectric material to relaxor ferroelectric material.…”