B1.4 - Ultra-Thin Resistors for Piezoresistive Sensors

Schmidt, Bertram; Zier, M.; Philipp, P.; Potfajova, J.

doi:10.5162/sensor11/b1.4

Cited by 2 publications

(4 citation statements)

References 6 publications

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“…The thickness values of the films estimated from the spectral simulation were substantiated by SIMS measurements (see figure S6). The concentration profiles of 16 O and 30 Si of a representative film deposited from the sol with S-P ratio of 25 are shown in figure 3. From these profiles the thickness of the SiO 2 layer was estimated as ∼7.4 nm.…”

Section: Resultsmentioning

confidence: 99%

“…The spectra in (e) and (f) are multiplied by a factor of 0. 16 O and 30 Si profiles of a SiO 2 film deposited from the sol with a S-P ratio of 25. The measurements were made using Cs + ion bombardment.…”

Section: Resultsmentioning

confidence: 99%

“…The SIMS measurements were carried out using a CAMECA IMS 3F instrument. The 11 B, 16 O and 30 Si ions were monitored under Cs + or O 2 + bombardment with impact energy of 560 eV or 1 keV, respectively, and with or without O flooding conditions. The secondary ions were collected from the central 10% of a 300 × 30 µm raster area.…”

Section: Simsmentioning

confidence: 99%

“…cantilever resistance. This requires ultra-shallow doping on the cantilever surface wherein the lower and abrupt doping depth can enhance the sensitivity of the sensor [14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

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Sub-2 nm boron doping in silicon using novel ultra-thin SiO₂ film produced by sol–gel dip coating as a capping layer

Peranantham¹,

Jeyachandran²

2021

Semicond. Sci. Technol.

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Advancements in semiconductor electronics and sensor technologies demand a more robust doping approach and process to fabricate ultra-shallow doping with abrupt depth, particularly on complex structured surfaces. Molecular monolayer doping (MLD) is a potential approach, but is limited by the difficulty in depositing a high-quality SiO 2 capping film without damaging the dopant molecular layer. In this work, a relative humidity condition during deposition of the film in the sol-gel dip-coating process is found to produce continuous, dense and stoichiometric ultra-thin SiO 2 films of quality equivalent to that produced by complicated thermal oxidation/etching and sophisticated chemical vapor deposition and atomic layer deposition methods. Applying these ultra-thin SiO 2 films as capping layers in the molecular MLD method, B doping in Si with sub-2 nm effective depth and sub-5 nm abrupt depth is achieved. Remarkably, around 82%-86% of doped B atoms in Si are found to be electrically active as estimated from sheet resistance measurements. The established sol-gel dip coating conditions to deposit ultra-thin SiO 2 films are generic and can be extended to produce high-quality ultra-thin films of other metal oxide materials required for advanced technological applications.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Simsmentioning

confidence: 99%

“…cantilever resistance. This requires ultra-shallow doping on the cantilever surface wherein the lower and abrupt doping depth can enhance the sensitivity of the sensor [14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

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