<b><i>In situ</i></b>SEM electromechanical characterization of nanowire using an electrostatic tensile device

Zeng, Han; Li, Tie; Bartenwerfer, Malte; Fatikow, Sergej; Wang, Yuelin

doi:10.1088/0022-3727/46/30/305501

Cited by 27 publications

(16 citation statements)

References 29 publications

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“…Most studies on the piezoresistive effect of SiC NWs used the bottom up method to grow nanowires [106]- [109]. Shao et al [106] and Zeng et al [107] applied mechanical stress to 3C-SiC NWs by using piezoelectric and electrostatic actuators and measured the induced strain by SEM. The gauge factors reported by Shao et al and Zeng et al were −6.9 and 14.1 respectively, which is 2 to 4 times smaller than that of bulk 3C-SiC.…”

Section: B Piezoresistive Effect In Silicon Carbidementioning

confidence: 99%

The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review

Phan

Dao

Nakamura

et al. 2015

J. Microelectromech. Syst.

219

148

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Section: B Piezoresistive Effect In Silicon Carbidementioning

confidence: 99%

The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review

Phan

Dao

Nakamura

et al. 2015

J. Microelectromech. Syst.

219

148

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“…The Young's modulus of copper deter mined from this formula equaled 43.5 GPa. This value is almost 2.5 times lower than the Young's modulus of bulk copper material (102.7 GPa [10]). An increase in the material ductility following a size reduction is typ ical for metallic crystal nanowires [11,12].…”

mentioning

confidence: 65%

Modeling the oscillations of a copper nanorod using the molecular dynamics method

2014

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937Nanorods (NRs) and nanowires (NWs) are the pri mary elements of nanoelectromechanical sensors and nanoswitches [1,2]. The natural frequency of metallic NRs lies in the gigahertz range, and the study of the dynamics of oscillations of such nanoresonators with the use of the molecular dynamics (MD) method allowed the researchers to characterize its specifics [3][4][5]. Analysis of the most widely studied system (metallic nanobeams (NWs) fixed at both ends) revealed the influence of surface effects on natural fre quency of this system f 0 and the emergence of beats in its oscillations [4,5]. The natural frequencies of nan oresonators were often determined from the time dependence of the periodic variation of their potential energy [3][4][5]. However, this f 0 determination method does not allow one to trace their spatial oscillations. This is especially important in the studies of oscilla tions of an NR fixed at one side. The oscillations of such an NR may take place in different planes and are coupled. Using the example of the dynamics of oscil lations of a copper NR, we show in the present paper that the determination of the resonance frequency from the data on periodic variations of the potential energy of this NR produces results that differ from the frequency value determined based on the data on the time variation of spatial NR oscillations. It is demon strated that the distribution of oscillation energy over different degrees of freedom may allow the NR poten tial energy to remain constant while the NR itself con tinues oscillating. It is found that predominantly lon gitudinal oscillations arise in the process of relaxation in a stressed NR. The Young's modulus of a copper NR is determined based on the results of measure ments of the frequency of its longitudinal oscillations. The obtained value is almost 2.5 times lower than the Young's modulus of bulk material.The modeling was performed with the use of an MDEAM software package of our own development [6]. This software package incorporates a calculation module and atomic structure visualization tools utiliz ing an OpenGL graphics library of our own develop ment. The Cu-Cu interatomic interaction was calcu lated with the use of the embedded atom method (EAM potential) [7]. The equations of motion were integrated using a leapfrog algorithm with a time step of 10 -15 s. The constancy of the number of particles, the volume, and the energy (NVE ensemble) was maintained in the process of modeling. The initial model temperature was set to 1 K. The coordinates of atoms were output to a file with an interval of 10 -13 s. This allowed tracing oscillations in the system with frequencies lower than 1 THz.The NR was an 8a × 8a × 90a (3.0 × 3.0 × 16.5 nm) parallelepiped with a 20a × 20a × 9a (7.2 × 7.2 × 1.5 nm) base cleaved from a bulk FCC (100) copper crystal with its lattice constant a = 0.3615 nm (Fig. 1a). The number of atoms in the NR equaled 18848. The lower two atomic layers of the base were fixed. Periodic boundary conditions in the XY plane were used to imit...

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“…3 . Two-terminal device was used to measure the resistivity of nanowire [ 25 ]. The wire was mechanically removed from the substrate by nano-operator equipped on focused ion beam (FIB) (FEI, QUANTA3D 600FIB System).…”

Section: Resultsmentioning

confidence: 99%

“…For FIB etching the root of the wire, a thin layer of Au was evaporated on the surface to protect the wire by electron-beam-induced deposition (EBID). Two-terminal device was used to measurement the resistivity of nanowire [ 25 ]. The wire was mechanically removed from the substrate by nano-operator equipped on focused ion beam (FIB) (FEI, QUANTA3D 600FIB System).…”

Section: Methodsmentioning

confidence: 99%

Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing

et al. 2017

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In this paper, amorphous silicon nanowires (α-SiNWs) were synthesized on (100) Si substrate with silicon oxide film by Cu catalyst-driven solid-liquid-solid mechanism (SLS) during annealing process (1080 °C for 30 min under Ar/H2 atmosphere). Micro size Cu pattern fabrication decided whether α-SiNWs can grow or not. Meanwhile, those micro size Cu patterns also controlled the position and density of wires. During the annealing process, Cu pattern reacted with SiO2 to form Cu silicide. More important, a diffusion channel was opened for Si atoms to synthesis α-SiNWs. What is more, the size of α-SiNWs was simply controlled by the annealing time. The length of wire was increased with annealing time. However, the diameter showed the opposite tendency. The room temperature resistivity of the nanowire was about 2.1 × 103 Ω·cm (84 nm diameter and 21 μm length). This simple fabrication method makes application of α-SiNWs become possible.

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In situSEM electromechanical characterization of nanowire using an electrostatic tensile device

Cited by 27 publications

References 29 publications

The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review

The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review

Modeling the oscillations of a copper nanorod using the molecular dynamics method

Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing

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