B
                  11
           and B10 magic-angle spinning nuclear magnetic resonance studies of cubic boron nitride films prepared by plasma chemical vapor deposition

Zhang, Wenjun; Tansho, Masataka; Matsumoto, Shinya; Mori, Tetsuya

doi:10.1063/1.1338516

Cited by 6 publications

(1 citation statement)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similarly, introducing fluorine chemistry into microwave plasma (MP) CVD [144] or electron cyclotron resonance (ECR) MPCVD [145] both yielded thick cBN films. The effects of plasma gas composition, substrate bias and substrate temperature on the phase purity, crystallinity, residual stress and adhesion-to-substrate of cBN films deposited have been studied systematically [146][147][148][149][150][151][152][153]. In all those approaches, BF 3 was introduced as a boron source, which decomposes into BF x clusters and fluorine atoms/ions.…”

Section: Growth Of Cbn Via Chemical Routementioning

confidence: 99%

Nucleation, growth and characterization of cubic boron nitride (cBN) films

Zhang¹,

Chong²,

Bello³

et al. 2007

J. Phys. D: Appl. Phys.

119

View full text Add to dashboard Cite

Cubic BN (cBN) has a set of extreme properties similar or even superior to diamond. The advance of science and technology of cBN has however been severely hampered by the poor quality of the material available (random orientation, limited film thickness, poor crystallinity and adhesion with substrates due to a non-cubic BN interlayer). This paper reviews the recent progress in the nucleation, growth and characterization techniques of cBN films. It describes various successful approaches in interface engineering and growth techniques in increasing film thickness, improving crystallinity and adhesion of cBN films to the substrate, which are the major issues hindering cBN films for both mechanical and electronic applications. Based on observations of the surface and interface structures, we further discuss the growth mechanisms of cBN films via physical and chemical routes.

show abstract

Section: Growth Of Cbn Via Chemical Routementioning

confidence: 99%

Nucleation, growth and characterization of cubic boron nitride (cBN) films

Zhang¹,

Chong²,

Bello³

et al. 2007

J. Phys. D: Appl. Phys.

119

View full text Add to dashboard Cite

show abstract

Solid-State NMR of Inorganic Semiconductors

Yesinowski

2011

Topics in Current Chemistry

104

View full text Add to dashboard Cite

Studies of inorganic semiconductors by solid-state NMR vary widely in terms of the nature of the samples investigated, the techniques employed to observe the NMR signal, and the types of information obtained. Compared with the NMR of diamagnetic non-semiconducting substances, important differences often result from the presence of electron or hole carriers that are the hallmark of semiconductors, and whose theoretical interpretation can be involved. This review aims to provide a broad perspective on the topic for the non-expert by providing: (1) a basic introduction to semiconductor physical concepts relevant to NMR, including common crystal structures and the various methods of making samples; (2) discussions of the NMR spin Hamiltonian, details of some of the NMR techniques and strategies used to make measurements and theoretically predict NMR parameters, and examples of how each of the terms in the Hamiltonian has provided useful information in bulk semiconductors; (3) a discussion of the additional considerations needed to interpret the NMR of nanoscale semiconductors, with selected examples. The area of semiconductor NMR is being revitalized by this interest in nanoscale semiconductors, the great improvements in NMR detection sensitivity and resolution that have occurred, and the current interest in optical pumping and spintronics-related studies. Promising directions for future research will be noted throughout.

show abstract