Articles you may be interested inEffect of postdeposition annealing on the electrical properties of β-Ga2O3 thin films grown on p-Si by plasmaenhanced atomic layer deposition J. Vac. Sci. Technol. A 32, 041504 (2014); 10.1116/1.4875935 High temperature phase transformation studies in magnetite nanoparticles doped with Co2+ ion J. Appl. Phys. 112, 054320 (2012); 10.1063/1.4748318Copper coverage effect on tungsten crystallites texture development in W/Cu nanocomposite thin films Crystallization energetics of amorphous hafnia powders and thin films on platinum substrates was studied by differential scanning calorimetry and time-resolved high temperature x-ray diffraction. For initially amorphous 25 and 20 nm films from atomic layer deposition, crystallization enthalpy decreases from Ϫ38 to Ϫ32 kJ/mol, and crystallization temperature increases from 388 to 417°C as thickness decreases. Enthalpy of water vapor adsorption on the surface of monoclinic hafnia was measured for both bulk powder and nanoparticles and was found to vary from Ϫ110 to Ϫ130 kJ/mol for coverage of ϳ5 H 2 O / nm 2 . The enthalpies of monoclinic hafnia with various surface areas, prepared by crystallization and annealing of an amorphous hafnia precursor, were measured by high temperature oxide melt solution calorimetry. Under the previously used assumption that the interfacial enthalpy is 20% of the surface enthalpy, the surface enthalpy was calculated from experimental data as 2.8Ϯ 0.1 J / m 2 for the hydrated surface and 3.7Ϯ 0.1 J / m 2 for the anhydrous hafnia surface. These values are similar to those measured previously for monoclinic zirconia.⌬H ds is the drop solution enthalpy measured by high temperature oxide melt solution calorimetry. e ⌬H ds−1 is the corrected drop solution enthalpy of hydrated monoclinic hafnia. f ⌬H ds−2 is the corrected drop solution enthalpy of anhydrous monoclinic hafnia nanoparticles.
123514-4Zhou et al.