Awakening the Photoelectrochemical Activity of α‐SnWO₄ Photoanodes with Extraordinary Crystallinity Induced by Reductive Annealing

Development of ABO4‐type photoanodes for photoelectrochemical water splitting

“…298 Compared with annealing in N 2 , annealing in H 2 can increase the crystallinity of α-SnWO 4 and thus improving the charge transport performance. 294 However, through XPS (Figure 12E) characterization, it was found that the Sn 2þ content on the surface of α-SnWO 4 was higher after H 2 annealing. Therefore, the photocurrent increase in this report may be related to the amount of Sn 2þ on the surface.…”

“…The hydrothermal F − added SnWO 4 film was annealed in argon at 500°C to obtain a long sheet‐like SnWO 4 film, which exhibited a photocurrent density of 0.79 mA cm −2 at 1.23 V versus RHE in the absence of any sacrificial agent 298 . Compared with annealing in N 2 , annealing in H 2 can increase the crystallinity of α‐SnWO 4 and thus improving the charge transport performance 294 . However, through XPS (Figure 12E) characterization, it was found that the Sn 2+ content on the surface of α‐SnWO 4 was higher after H 2 annealing.…”