AVS-M: From Standards to Applications

Wang, Ye-Kui

doi:10.1007/s11390-006-0332-1

Cited by 6 publications

(4 citation statements)

References 27 publications

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“…| 5 of 12 modified layer has been observed in numerous studies with both inorganic (SiO 2 and Si 3 N 4 ) and organic (PR193, PR248, PMMA) surface compositions. [23][24][25][26] A similar modification mechanism has also been observed with an oxygen plasma in our prior work; and the model setup from that work motivated the model setup for the current work. [6] Due to the complexity of the surface interaction with C 4 F 8 , we made the following assumptions in establishing the ellipsometric model.…”

Section: Surface Interaction With C 4 Fmentioning

confidence: 77%

Evolution of photoresist layer structure and surface morphology under fluorocarbon‐based plasma exposure

Pranda

Razo

Fourkas

et al. 2019

Plasma Processes & Polymers

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Ion bombardment of photoresist materials during plasma etching results in the formation of a surface dense amorphous carbon (DAC) layer that contributes to both etch resistance and the development of surface roughness. Real‐time ellipsometric measurements/analysis reveals that a C4F8‐containing plasma interacts with an Ar‐plasma‐formed DAC layer to produce a modified DAC/fluorocarbon (FC) layer by FC deposition/diffusion of fluorine into the surface. The depletion of the DAC layer via modification and ion bombardment causes the etch rate of the bulk layer to increase. As the modified surface layer is formed, a noticeable decrease in surface roughness decrease is observed. These findings provide an understanding of the mechanisms of atomic layer etching processes in photoresist materials.

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Section: Surface Interaction With C 4 Fmentioning

confidence: 77%

Evolution of photoresist layer structure and surface morphology under fluorocarbon‐based plasma exposure

Pranda

Razo

Fourkas

et al. 2019

Plasma Processes & Polymers

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“…In the previous work for electrokinetic flows, the bounce-back rules were used [39][40][41][42][45][46][47], or a second-order accurate nonslip boundary condition was implemented at wall surfaces [49]. The half-way bounce-back rule [62,63] for the nonequilibrium distribution proposed by Zou and He [64] is introduced into this work and extended to both hydrodynamic and electrodynamic boundary implements to deal with the complex geometries in porous media.…”

Section: Boundary Conditionsmentioning

confidence: 99%

“…Wang et al [46,47] developed a lattice Poisson-Boltzmann method (LPBM) which combined a potential evolution method on discrete lattices to solve the nonlinear Poisson-Boltzmann equation with a density evolution method on discrete lattices to solve the Boltzmann-BGK equation. The LPBM has been applied to study the mixing enhancement in heterogeneously charged microchannels [48] and the roughness and cavitation effects in electroosmotic microfluidics [49].…”

Section: Introductionmentioning

confidence: 99%

Electrokinetic pumping effects of charged porous media in microchannels using the lattice Poisson–Boltzmann method

Wang

Chen

et al. 2006

Journal of Colloid and Interface Science

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The electrokinetic pumping characteristics of nanoscale charged porous media packed in microchannels are investigated using a mesoscopic evolution method. When the pore size of porous media is comparable to the thickness of electric double layer, the effects of particle surface potentials on the bulk electric potential distribution will not be negligible. The lattice Poisson-Boltzmann method provides an accurate numerical solution for such problems, which combines two sets of lattice evolution methods solving the nonlinear Poisson-Boltzmann equation for electric potential distribution and the Navier-Stokes equations for fluid flow, respectively. The effects of the finite particle size, the bulk ionic concentration, the external electric field strength and the surface potentials on the electroosmotic micropump performances are therefore studied. The results show that for a certain porosity the maximum pumping pressure is inversely proportional to the particle diameter and the flow rate under zero pressure drop increases with the particle size. The pumping flow rate decreases with the backpressure yet increases with the external electric field strength, linearly respectively. The averaged flow rate increases with the bulk ionic concentration and the particle surface potential, but is slightly influenced by the surface potentials of channel walls. The numerical results agree with the published experimental data while some results deviate from the predictions based on the macroscopic linear assumptions.

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“…The microscopic uniformity issues have been intensively studied over the last few decades and the main contributing effects identified. Among them are aspect ratio dependent etching (ARDE), [1][2][3] depth loading between isolate (ISO) and dense structures, 1,4) and a differential charging of high aspect ratio features, 1,[5][6][7][8] all of which are often taking place in dry etch processing that can be revealed by means of discovering various profile distortions (trenching, bowing or twisting), [9][10][11] potato-shaped cross sections (in case of high aspect ratio contact holes), 12) etch stop phenomena, 3,13) etc. Discussions on what options are efficient to deal with such problems can also be found in Refs.…”

Section: Introductionmentioning

confidence: 99%

Study on processing step uniformity tuning during FET fabrication and sensor wafer response as a function of chuck temperature adjustment

Milenin

Boullart

Quli

et al. 2014

Jpn. J. Appl. Phys.

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The effect of chuck temperature adjustment on critical dimension uniformity was studied for the shallow trench isolation etch process by introducing a temperature gradient in a multi-temperature-zone electrostatic chuck. It is shown that the initial radial critical dimension non-uniformity can be improved by a gradual temperature adjustment of the electrostatic chuck and results in the target specification values of uniformity, 3σ ≤ 1.5 nm, for a critical dimension of about 35 nm. Both temperature and RF sensor wafers were used to analyze the impact of an electrostatic chuck temperature gradient on process uniformity by utilizing their unique in situ spatial and temporal mapping capabilities. Thus, the across-wafer thermal sensitivity of the critical dimension was estimated for dense structures: a temperature change of 1 °C leads to a critical dimension change of ∼0.7 nm. The RF sensor wafer was also shown to have a clear response of RF current uniformity to the electrostatic chuck temperature gradient that suggests there could be other phenomena affecting critical dimension uniformity besides temperature itself. The pure temperature contribution to critical dimension change was found to be less than 0.3 nm/°C for the temperature range studied. Finally, a possible mechanism of critical dimension tuning is discussed and an assessment of each separate etch step’s sensitivity to the electrostatic chuck temperature gradient is performed.

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AVS-M: From Standards to Applications

Cited by 6 publications

References 27 publications

Evolution of photoresist layer structure and surface morphology under fluorocarbon‐based plasma exposure

Evolution of photoresist layer structure and surface morphology under fluorocarbon‐based plasma exposure

Electrokinetic pumping effects of charged porous media in microchannels using the lattice Poisson–Boltzmann method

Study on processing step uniformity tuning during FET fabrication and sensor wafer response as a function of chuck temperature adjustment

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