Abstract:In contrast to the previous work which solved the problem of gallium pollution using hardware modifications, herein, the changes are examined to process conditions to reduce gallium pollution in InAlN layer. Using a model of GaN decomposition followed by gallium desorption and diffusion to the showerhead, different process conditions are used to limit either the desorption or the diffusion. Reducing the GaN growth temperature gives some improvement by reducing desorption, but affects channel mobility, likely d… Show more
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