Avalanche noise characteristics of thin GaAs structures with distributed carrier generation [APDs]

Abstract

ReuseUnless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single copy solely for the purpose of non-commercial research or private study within the limits of fair dealing. The publisher or other rights-holder may allow further reproduction and re-use of this version -refer to the White Rose Research Online record for this item. Where records identify the publisher as the copyright holder, users can verify any specific terms of use on the publisher's website. TakedownIf you consider content in White Rose Research Online to be in breach of UK law, please notify us by emailing eprints@whiterose.ac.uk including the URL of the record and the reason for the withdrawal request. Abstract-It is known that both pure electron and pure hole injection into thin GaAs multiplication regions gives rise to avalanche multiplication with noise lower than predicted by the local noise model. In this paper, it is shown that the noise from multiplication initiated by carriers generated throughout a 0.1 m avalanche region is also lower than predicted by the local model but higher than that obtained with pure injection of either carrier type. This behavior is due to the effects of nonlocal ionization brought about by the dead space; the minimum distance a carrier has to travel in the electric field to initiate an ionization event.

Field dependence of impact ionization coefficients in In/sub 0_53/Ga/sub 0_47/As

“…For the mixed carrier injection used in this work, the multiplication factor is found by integrating over the multiplication region weighted by the carrier-generation rate in a similar manner to that described by Li et al [13]. and are both given by…”

Evolution of Low-Noise Avalanche Photodetectors

“…It has been shown for a wide range of materials including InP, [53][54][55][56] GaAs, [55][56][57][58][59][60] In1-xAlxAs, 55,56,61 Si, 62 AlxGa1-xAs, 55,56,[63][64][65][66][67] SiC, 68 GaP, 69 and GaInP 70 that reducing the thickness of the multiplication layer, usually to submicron dimensions, results in lower excess noise. 71 -79 This is contrary to expectations based on the local-field model and points to its inadequacy when the non-local nature of impact ionization becomes significant.…”

Exact Analytical Formula for the Excess Noise Factor for Mixed Carrier Injection Avalanche Photodiodes

“…McIntyre's edge-injection formula for F can be inaccurate when applied to APDs with submicron multiplication region widths (e.g., <500 nm) and high values of k (e.g., >0.12) [4] Si , [8], [9] Si , [11] GaAs , [12] Si . One of the main reasons for such inaccuracy is the presence of mixed injection.…”

“…In 2017, Hossain et al used the numerical approach to further calculate the excess noise factor for Si APDs in the case of distributed mixed injection [9], where the photon absorption profile within the MR was taken into account. Experiments have also shown the wavelength dependence of the excess-noise factor; moreover, good agreement between numerical solutions of the analytical model and experiments on the role of mixed injection has been shown [5], [8]- [9][10] [11] [12]. The experiments and the numerically calculated F under mixed injection were also compared with that calculated using the McIntyre's formula [2], which assumes edge injection.…”