Avalanche multiplication characteristics of Al/sub 0.8/Ga/sub 0.2/As diodes

Ng, B. K.; David, J.P.R.; Plimmer, S.A.; Rees, G.J.; Tozer, R.C.; Hopkinson, M.; Hill, G.

doi:10.1109/16.954454

Cited by 34 publications

(27 citation statements)

References 21 publications

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“…Multiplication measurements indicate that the ratio of Al Ga As converges to 1 as the electric field increases [9], [11]. The excess noise characteristics of diodes with m are in qualitative agreement with the local noise model and reflect the converging ratio in Al Ga As.…”

Section: Discussionsupporting

confidence: 65%

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Excess noise characteristics of Al/sub 0.8/Ga/sub 0.2/As avalanche photodiodes

David

Tozer

et al. 2002

IEEE Photon. Technol. Lett.

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Abstract-The avalanche noise characteristics of Al 0 8 Ga 0 2 As have been measured in a range of p-i-n and n-i-p diodes with i-region widths varying from 1.02 to 0.02 m. While thick bulk diodes exhibit low excess noise from electron initiated multiplication, owing to the large ratio (1 ), the excess noise of diodes with 0 31 m were found to be greatly reduced by the effects of dead space. The thinnest diodes exhibit very low excess noise, corresponding to =008, up to a multiplication value of 90. In contrast to most III-V materials, it was found that both thick and thin Al 0 8 Ga 0 2 As multiplication layers can give very low excess noise and that electrons must initiate multiplication to minimize excess noise, even in thin structures.Index Terms-Al 0 8 Ga 0 2 As, APD, avalanche excess noise, avalanche multiplication, impact ionization, indirect band gap.

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Section: Discussionsupporting

confidence: 65%

“…The diodes in this work have been reported in [11]. The -region thicknesses of the homojunction p-i-n and n-i-p diodes are m and m, respectively, while the heterojunction p-i-n structure has m. The avalanche multiplication and excess noise were measured using the method described previously by Li et al [4].…”

Section: Noise Measurementmentioning

confidence: 99%

Excess noise characteristics of Al/sub 0.8/Ga/sub 0.2/As avalanche photodiodes

David

Tozer

et al. 2002

IEEE Photon. Technol. Lett.

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“…For example, the electric field dependence of the impact ionization coefficients at room temperature has been reported for x ¼ 0.15, 0.3, 0.6, 15 x ¼ 0.2, 0.4, 16 and x ¼ 0.8, 17 but only limited data is available about their temperature dependences, with reports for x ¼ 0.2, 0.4, 16 x ¼ 0.6, 18 and x ¼ 0. 8 (Ref.…”

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confidence: 99%

Temperature dependence of the average electron-hole pair creation energy in Al0.8Ga0.2As

Barnett

Lees

Bassford

2013

Applied Physics Letters

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The temperature dependence of the average energy consumed in the creation of an electron-hole pair in the wide bandgap compound semiconductor Al0.8Ga0.2As is reported following X-ray measurements made using an Al0.8Ga0.2As photodiode diode coupled to a low-noise charge-sensitive preamplifier operating in spectroscopic photon counting mode. The temperature dependence is reported over the range of 261 K–342 K and is found to be best represented by the equation εAlGaAs = 7.327–0.0077 T, where εAlGaAs is the average electron-hole pair creation energy in eV and T is the temperature in K.

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“…By extrapolating the multiplication characteristics, a value of 58.3 V was estimated for , in close agreement with that obtained from reverse dark measurements. Si [5] and Al Ga As [6] are two materials that are also known to exhibit widely disparate ionization coefficients. For comparison, the electron and hole initiated multiplication characteristics of Si and Al Ga As diodes with m are shown in Fig.…”

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confidence: 99%