Avalanche Multiplication and Excess Noise Factor of Heterojunction Avalanche Photodiodes

You, Ah Heng; Low, L. C.; Cheang, Pei Ling

doi:10.1109/smelec.2006.381074

Cited by 2 publications

(3 citation statements)

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“…3. It is noticed that the dead space has a strong influence on both the mean multiplication gain and excess noise factor in single heterojunction device [11,12]. This phenomenon also occurs in the DHAPD.…”

Section: Resultsmentioning

confidence: 90%

“…Previously a complex HAPD model [11,12] was developed using MC method. This model is extended to a DHAPD model to investigate the dead space effect on mean multiplication gain and excess noise factor.…”

Section: Dead Space Effect In Double Heterojunction Avalanche Photodiodementioning

confidence: 99%

“…A MC model for single heterojunction APD [11,12] was proposed and the results showed that the model was able to illustrate noise reduction by choosing proper first layer material in the HAPD device. The non-local effects of dead space and heterointerface probability were included in the findings and no obvious enhancement of impact ionization could be observed.…”

Section: Introductionmentioning

confidence: 99%

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Dead space effect on excess noise factor in double heterojunction avalanche photodiodes

et al. 2009

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A double heterojunction avalanche photodiode (DHAPD) model using Monte Carlo (MC) method is applied to study the effect of dead space on excess noise factor. The mean multiplication gain and excess noise factor involving electron and hole impact ionizations are simulated in our work. The higher order impact ionization occurs in three multiplication layers is considered in the model. The avalanche characteristics of DHAPD are obtained by incorporating the dead-space, d ij , hole to electron coefficients ratio, k j and heterointerface probability, p im . Among these factors, the dead space effect plays an important role in reducing the excess noise factor in thin DHAPD. The dead space effect is also known in minimizing noise in homojunction APD when the device length is getting smaller. The distributions of carriers in multiplication region are demonstrated to explain the effect of dead space in DHAPD. Meanwhile, it is also shown that the hole to electron ionization coefficients ratio, k 2 = 0.1 in the second layer gives the small excess noise factor in designing the DHAPD.

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Section: Resultsmentioning

confidence: 90%

Section: Dead Space Effect In Double Heterojunction Avalanche Photodiodementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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