Autoresonant control of the many-electron dynamics in nonparabolic quantum wells

Abstract

The optical response of nonparabolic quantum wells is dominated by a strong peak at the plasmon frequency. When the electrons reach the anharmonic regions, resonant absorption becomes inefficient. This limitation is overcome by using a chirped laser pulse in the autoresonant regime. By direct simulations using the Wigner phase-space approach, we prove that, with a sequence of just a few pulses, electrons can be efficiently detrapped from a nonparabolic well. For an array of multiple quantum wells, we can create and control an electronic current by suitably applying an autoresonant laser pulse and a slowly varying dc electric field.

Autoresonant control of the magnetization switching in single-domain nanoparticles

“…Autoresonant excitation has been observed in a wide variety of environments, including atomic systems [18,19], plasmas [20,21], fluids [22], and semiconductor quantum wells [23]. Some authors also noticed the beneficial effect of a chirped pulse on the magnetization dynamics in a nanoparticle [24][25][26], but lacked the analytical tools provided by the autoresonance theory.…”

Capture into resonance and phase-space dynamics in an optical centrifuge

“…These trajectories, in principle, can change their trapping status as the result of nonadiabatic dynamics and, thus, affect the OC efficiency. It should be mentioned that many other AR systems [25][26][27][28] are described by the resonant Hamiltonian similar to (17). The process of capture into resonance in all these problems depends critically on the specific form of function V .…”

“…This phenomenon has been observed and studied in many applications, including atomic systems [23,24], plasmas [25,26], fluids [27], and semiconductor quantum wells [28]. By using methods in the theory of AR and analyzing the associated phase space dynamics we will for the first time calculate the efficiency of the OC process.…”

Collective Electron Dynamics in Metallic and Semiconductor Nanostructures

“…We use typical parameters for semiconductor quantum wells [90,91]: effective electron mass and dielectric constant m * = 0.067m e and ε = 13ε 0 ; volume density n 0 = 10 16 cm −3 , oscillator energyhω 0 = 3.98meV, and oscillator length L ho = h/m * ω 0 ≃ 17nm. For η = 1, this yields a maximum surface density for the electrons n s = 4.64 × 10 10 cm −2 and a maximum Fermi temperature T F = 29.3K.…”