Automatic resist parameter calibration procedure for lithography simulation

Tollkuehn, Bernd; Hoepfl, Max J.; Erdmann, Andreas; Majoni, Stefan; Jess, Marion

doi:10.1117/12.425221

Cited by 3 publications

(1 citation statement)

References 7 publications

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“…The coefficients k w w ,..., 1 operate as a weight for k partial objective functions [8]. Equation (2) can be applied for matching FEM, iso dense bias, linearity curves and other data sets.…”

Section: Objective Functionsmentioning

confidence: 99%

Will Darwin's law help us to improve our resist models?

Tollkuhn

Fuehner

Matiut

et al. 2003

Advances in Resist Technology and Processing XX

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Calibration of resist model parameters becomes more and more important in lithography simulation. The general goal of such a calibration procedure is to find parameters and model options which minimize the difference between experimentally measured and simulated data. In this paper a multidimensional downhill simplex method and a genetic algorithm are introduced. We investigate the performance of different modeling options such as the diffusivity of the photogenerated acid and of the quencher base, and different development models. Furthermore, new objective functions are proposed and evaluated: The overlap of process windows between simulated and experimental data and the comparison of linearity curves. The calibration procedures are performed for a 248 nm and for a 193 nm chemically amplified resist, respectively

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Section: Objective Functionsmentioning

confidence: 99%

Will Darwin's law help us to improve our resist models?

Tollkuhn

Fuehner

Matiut

et al. 2003

Advances in Resist Technology and Processing XX

Self Cite

View full text Add to dashboard Cite

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Comparison of simulation approaches for chemically amplified resists

Erdmann¹,

Henke

Robertson³

et al. 2001

SPIE Proceedings

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Lithography simulators have become a standard tool in industrial and governmental research and development departments. In contrast to the modeling approaches for the optical system and for the lithographic performance of i-line resists, there is still no consensus on the modeling of chemically amplified resists (CAR). Existing models differ in the description of the kinetics and the diffusion phenomena during post exposure bake (PEB) and in the specification of the development rate. A modeling approach was established, that combines the light induced generation of photoacid, in- and outdiffusion of acid or base components, a generalized deprotection kinetics, Fickian and non-Fickian diffusion of resist components and an arbitrary development rate model. Existing models such as the effective acid model and a standard deprotection model for CAR can be considered as special cases of the implemented model. To evaluate the importance of certain options of the model and of the model par ameters we have evaluated the performance of the model by comparing simulated CD data and resist profiles with experimental data

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Calibration of ESCAP resist simulation parameters from consideration of printed CD pitch bias, CD measurement offset and wafer thermal history

Robertson¹,

Kang²,

Tye³

et al. 2002

SPIE Proceedings

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In this work an automated optimization routine is used to modify modeling parameters for a chemically amplified photoresist, with the goal of minimizing the error observed between lithography simulation and experimental results. It is shown that a basic tuning procedure modifying, optimizing only CD measurement offset and acid generation efficiency, improves the fit significantly. Further improvements can be made by optimization of the diffusiondeprotection kinetic parameters, in combination with the two aforementioned values. It is shown further improvement is observed if the actual temperature profile experienced in the postexposure bake process is considered and the temperature dependence of both the diffusion and the deprotection processes are optimized. This parameter values that result in this improvement infer a temporal offset in the start, and finish, ofdeprotection and acid diffusion.

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Automatic resist parameter calibration procedure for lithography simulation

Cited by 3 publications

References 7 publications

Will Darwin's law help us to improve our resist models?

Will Darwin's law help us to improve our resist models?

Comparison of simulation approaches for chemically amplified resists

Calibration of ESCAP resist simulation parameters from consideration of printed CD pitch bias, CD measurement offset and wafer thermal history

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