Automatic Nonlinear Modeling Technique for Gaas HEMT

Bilevich, Dmitry V.; Popov, A.; Salnikov, A. S.; Добуш, И. М.; Goryainov, A. S.; Kalentyev, A. A.; Garays, D. V.

doi:10.1109/dynamics.2018.8601444

Cited by 3 publications

(5 citation statements)

References 14 publications

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“…A GaAs HEMT with 2×20μm in 70nm process is selected to verify whether the customized model following the strategy meets the design requirements. It takes no more than five minutes by the automatic parameters extraction toolkit embedded in the ICCAP (parameters extraction platform developed by Keysight), which shows that the customized model development following the strategy is more efficient compared with the automatic nonlinear modeling for GaAs HEMT completed within 5 hours [1]. Fig.…”

Section: Large-signal Verificationmentioning

confidence: 99%

“…The key to realizing the better performance of MMIC is to develop a compact model that can accurately predict the large-signal characteristics of transistors. However, MMIC designers are facing the challenges of the PDK model not meeting requirements for frequency-band and accuracy, and model development not keeping up with simulation model requirements [1]. Taking the period and cost of model development into consideration, MMIC designers are obliged to develop customized models themselves based on the foundry process.…”

Section: Introductionmentioning

confidence: 99%

“…Angelov model, an empirical large-signal model based on transconductance ( m g ) at peak points, is widely applied to describe a large-signal model of compound semiconductor devices with its complete description of various high-order effects such as dispersion effect, self-heating effect, and breakdown effect [1][2][3][4][5]. At present, a variety of parameter extraction algorithms have been developed for the large-signal models.…”

Section: Introductionmentioning

confidence: 99%

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A strategy dedicated to the concise and efficient development of the customized large-signal model for GaAs HEMTs

Zhu¹,

Yan²,

Tian³

et al. 2022

J. Phys.: Conf. Ser.

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In this letter, a strategy dedicated to the concise and efficient development of the customized large-signal models for GaAs HEMTs is proposed, which is specialized for MMIC designers. The core concepts of the strategy are a deconstruction of the original thought of model construction and dimension reduction of the objective functions of optimization algorithms. The development of an Angelov-based customized large-signal model following this strategy has been successfully applied to GaAs HEMTs in 70nm process. The results show that it takes less than five minutes to execute such a parameter extraction algorithm with a one-button extraction function and good agreement is achieved between the model simulation and device measurement up to 65GHz.

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Section: Large-signal Verificationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A strategy dedicated to the concise and efficient development of the customized large-signal model for GaAs HEMTs

Zhu¹,

Yan²,

Tian³

et al. 2022

J. Phys.: Conf. Ser.

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“…For HEMT devices, recent studies and literatures have become popular, but generally for single-gate structures. [5][6][7][8][9] Since the dual-gate HEMT device was fabricated, several small-signal, 10,11 and large-signal 12 models have been proposed. Dual-gate HEMTs have the advantages of higher gain, higher stability, and controllable gain compared with single-gate HEMTs.…”

Section: Introductionmentioning

confidence: 99%

“…For HEMT devices, recent studies and literatures have become popular, but generally for single‐gate structures 5–9 . Since the dual‐gate HEMT device was fabricated, several small‐signal, 10,11 and large‐signal 12 models have been proposed.…”

Section: Introductionmentioning

confidence: 99%

A complete small‐signal model of GaAs dual‐gate HEMT

Huang

Chen

2022

Int J Numerical Modelling

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A complete small‐signal model of dual‐gate HEMT is proposed, considering the parasitic element effects. To extract the intrinsic elements accurately, the parasitic elements are eliminated by using a new method in this paper. It is realized by constructing two simple three‐port matrices and eliminating them with the features of π‐type and T‐type networks. This method is fast and accurate. Dual‐gate HEMTs could be regarded as a cascode connection of two single‐gate HMETs. A dual‐gate HEMT is fabricated on a commercial 0.25 μm GaAs technology to verify the proposed the extraction method. The result shows a good agreement between measured and simulated data over a wide frequency range.

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