Automatic locking of a 633 nm semiconductor laser on iodine

Cliche, J. F.; Zarka, A.; Têtu, M.; Chartier, J. M.

doi:10.1109/19.769666

Cited by 5 publications

(1 citation statement)

References 3 publications

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“…The aim is to have a user-friendly system suitable for any wavelength and with any gas as reference. Prior to the current comparison, this type of system had been used at a wavelength of 1.5 mm with acetylene [22] and 633 nm with iodine [23].…”

Section: Descriptionmentioning

confidence: 99%

International comparison of eight semiconductor lasers stabilized on¹²⁷I₂at = 633 nm

Zarka¹,

Abou‐Zeid²,

Chagniot³

et al. 2000

Metrologia

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An international comparison of eight I -stabilized semiconductor laser systems (DLs) has been carried out. Five of the DLs were extended-cavity lasers (ECLs) using extra-cavity saturation spectroscopy; another was a microlens-mounted diode modified to have weak optical feedback, stabilized using the same technique; the seventh ECL was stabilized using frequency-modulated spectroscopy. The final DL was a simple laser diode at 635 nm locked with a digital system on a linear absorption of iodine. The P(33) 6-3 transition of iodine was first used to compare the first seven DLs with a He-Ne laser stabilized on the R(127) 11-5 transition of iodine. The relative frequency stability of these lasers was between 5 parts in and 7 parts in for a sampling time of 1 s, with the best results less than 2 parts in over 1000 s. The frequency repeatability measured during one week was of the order of a few tens of kilohertz. This large fluctuation was caused by poor adjustment of the electronic offset of two of the lasers. For the well-corrected lasers, the repeatability was within a few kilohertz. A study of stabilization on the strong absorption group of transitions R(60) 8-4, R(125) 9-4 and P(54) 8-4, located about -12 GHz from the R(127) 11-5 transition, was also carried out. For the first time, a short-term frequency stability better than that of the classical He-Ne laser around 633 nm has been achieved with a relative frequency stability of 4 parts in for 1 s.

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Section: Descriptionmentioning

confidence: 99%

International comparison of eight semiconductor lasers stabilized on¹²⁷I₂at = 633 nm

Zarka¹,

Abou‐Zeid²,

Chagniot³

et al. 2000

Metrologia

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Sinusoidal frequency modulation on laser diode for frequency stabilization and displacement measurement

Maeda

Aketagawa

2016

Measurement

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Analog detection device in a sub-micron linear encoder based on a fibre-optic interferometer with a 3×3 coupler

Chow

Cheung

Jin

2010

IET Science, Measurement &Amp; Technology

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Automatic locking of a 633 nm semiconductor laser on iodine

Cited by 5 publications

References 3 publications

International comparison of eight semiconductor lasers stabilized on¹²⁷I₂at = 633 nm

International comparison of eight semiconductor lasers stabilized on¹²⁷I₂at = 633 nm

Sinusoidal frequency modulation on laser diode for frequency stabilization and displacement measurement

Analog detection device in a sub-micron linear encoder based on a fibre-optic interferometer with a 3×3 coupler

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Automatic locking of a 633 nm semiconductor laser on iodine

Cited by 5 publications

References 3 publications

International comparison of eight semiconductor lasers stabilized on127I2at = 633 nm

International comparison of eight semiconductor lasers stabilized on127I2at = 633 nm

Sinusoidal frequency modulation on laser diode for frequency stabilization and displacement measurement

Analog detection device in a sub-micron linear encoder based on a fibre-optic interferometer with a 3×3 coupler

Contact Info

Product

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International comparison of eight semiconductor lasers stabilized on¹²⁷I₂at = 633 nm

International comparison of eight semiconductor lasers stabilized on¹²⁷I₂at = 633 nm