Automatic Device Model Parameter Extractions via Hybrid Intelligent Methodology

Computational modeling of plasma etching processes at the feature scale relevant to the fabrication of nanometer semiconductor devices is critically dependent on the reaction mechanism representing the physical processes occurring between plasma produced reactant fluxes and the surface, reaction probabilities, yields, rate coefficients, and threshold energies that characterize these processes. The increasing complexity of the structures being fabricated, new materials, and novel gas mixtures increase the complexity of the reaction mechanism used in feature scale models and increase the difficulty in developing the fundamental data required for the mechanism. This challenge is further exacerbated by the fact that acquiring these fundamental data through more complex computational models or experiments is often limited by cost, technical complexity, or inadequate models. In this paper, we discuss a method to automate the selection of fundamental data in a reduced reaction mechanism for feature scale plasma etching of SiO2 using a fluorocarbon gas mixture by matching predictions of etch profiles to experimental data using a gradient descent (GD)/Nelder–Mead (NM) method hybrid optimization scheme. These methods produce a reaction mechanism that replicates the experimental training data as well as experimental data using related but different etch processes.

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Automatic Device Model Parameter Extractions via Hybrid Intelligent Methodology

Cited by 3 publications

References 10 publications

Model Auto Extraction for Gate-All-Around Silicon Nanowire MOSFETs Using A Decomposition-Based Many-Objective Evolutionary Algorithm

Model Auto Extraction for Gate-All-Around Silicon Nanowire MOSFETs Using A Decomposition-Based Many-Objective Evolutionary Algorithm

Bridging TCAD and AI: Its Application to Semiconductor Design

Autonomous hybrid optimization of a SiO2 plasma etching mechanism

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