The demand for wide bandwidth and high efficiency RF transmitter modules is growing in various fields, and the difficulty of power amplifier research also lies in meeting the design requirements of wide bandwidth and high efficiency at the same time. In this paper, an ultra-wideband power amplifier operating at 0.5~2.5 GHz is designed based on the gallium nitride high electron mobility transistor CGH40010F. In order to achieve higher efficiency over a wide bandwidth, an improved simplified real-frequency method is used to optimize the design of the output matching circuit. Simulation results show that the saturated output power exceeds 40.4 dBm within 0.5~2.5 GHz, the drain efficiency ranges from 55.3% to 71.4%, the gain ranges from 12.4 dB to 14.4 dB, and the gain flatness is ±1 dB. it meets the requirements of the transmitter system.