AuI and AgI Complexes with Tertiary Phosphines and Perfluorinated Carboxylates as Precursors for CVD of Gold and Silver

Szłyk, Edward; Piszczek, Piotr; Łakomska, Iwona; Grodzicki, A.; Szatkowski, J.; Błaszczyk, T.

doi:10.1002/(sici)1521-3862(200006)6:3<105::aid-cvde105>3.0.co;2-k

Cited by 42 publications

(17 citation statements)

References 6 publications

(7 reference statements)

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“…Thermogravimetric and differential thermal analyses (TG/DTA) of 1 and 2, reported in the literature, revealed their decomposition to Ag 0 between 363 K and 623 K. [15±19] Thin film growth from 1 and 2 was carried out onto 10 20 mm p-type Si (111) and glass substrates in a hot-wall, horizontal, glass CVD reactor [19] under the conditions listed in Table 2. The silver films obtained exhibited good adhesion according to the Scotch tape test.…”

Section: Resultsmentioning

confidence: 99%

“…CVD experiments were carried out using a horizontal reactor as described previously [19], and typical conditions are listed in Table 2. The silicon and glass substrates were cleaned before use by boiling in toluene (1 h), and washing in concentrated H 2 SO 4 and distilled water.…”

Section: Methodsmentioning

confidence: 99%

“…Temperature variable IR spectra were obtained with a SPECAC variable temperature cell, in the range 303±523 K. The sample was placed in the cell below the optical axis of the spectrometer, and the spectra of vapors were registered. NMR spectra were determined with a Varian Gemini 200 MHz at frequencies typical for 13 C, 19 F, and 31 P in CDCl 3 solutions. Applied standards were TMS for 13 C, CFCl 3 for 19 F, and 80 % H 3 PO 4 for 31 P. Mass spectra were measured with a MS AMD-604, MASPEC system using the EI method.…”

Section: Methodsmentioning

confidence: 99%

“…Our thermal and spectroscopic studies proved that RCOOAgPRM¢ 3 compounds exhibited sufficient volatility in the range 423± 453 K, and a low decomposition temperature (493±623 K) under a pressure of 2±6 mbar. [18,19] In this paper we describe the preparation and detailed characteristics of silver films deposited by CVD techniques from C 2 F 5 COOAgPMe 3 (1) and C 2 F 5 COOAg (2). The latter was studied in order to determine the influence of trimethylphosphine ligand on the quality of silver films and the deposition process.…”

Section: Introductionmentioning

confidence: 99%

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CVD of AgI Complexes with Tertiary Phosphines and Perfluorinated Carboxylates—A New Class of Silver Precursors

Szłyk

Piszczek²,

Grodzicki

et al. 2001

Chem. Vap. Deposition

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COOAg (2) have been used as precursors for the CVD of silver layers in the temperature range 493±623 K. The thin films obtained were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), scanning tunneling electrochemical microscopy (STEM), X-ray photoelectron spectroscopy (XPS), and temperature variable infrared (IR) measurements. The SEM images of Ag films grown from 2 exhibited a surface with a grain size in the range 0.4±1.5 lm, whereas from 1 the size was~0.1 lm. This was confirmed by the STEM studies. The better stability of 1 in the vapor phase was proved by temperature variable IR spectra (373±523 K). Mass spectrometry (MS) images confirmed the presence of the monomeric and dimeric species, and the recombination ions transported in vapors. The XPS image analysis of the silver layers revealed the presence of some carbon impurities. The films demonstrated good adhesion to silicon substrates.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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CVD of AgI Complexes with Tertiary Phosphines and Perfluorinated Carboxylates—A New Class of Silver Precursors

Szłyk

Piszczek²,

Grodzicki

et al. 2001

Chem. Vap. Deposition

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“…In our works we have focused on the study of [Ti 6 O 6 (O i Pr) 6 (O 2 C t Bu) 6 ] expected to be a promising CVD precursor for the deposition of TiO 2 nanolayers, in the range of 673-873 K [11][12][13]. The deposition of pure films with a lower content of impurities than 2% has been achieved using Ar/H 2 O as a carrier gas.…”

Section: Introductionmentioning

confidence: 99%

Activity of TiO2 deposited by the CVD method on ammoxidized surface of a carbonaceous material in hydrogenation of styrene

Wachowski

Grodzicki

Piszczek

et al. 2007

React Kinet Catal Lett

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Metallic Materials Deposition: Metal‐Organic PrecursorsBased in part on the article Metallic Materials Deposition: Metal–Organic Precursors by Herbert D. Kaesz, Alfred Zinn, & Lutz Brandt which appeared in theEncyclopedia of Inorganic Chemistry, First Edition.

Winter

Zheng

El‐Kaderi

2005

Encyclopedia of Inorganic Chemistry

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This review describes metal‐organic precursors for the growth of metal‐containing thin films by chemical vapor deposition methods. The major emphasis is on precursors that have been reported since 1994, and corresponds to a time of major growth in this field. Progress in the development of metal‐organic precursors is documented for the main group, lanthanide, and group 4–11 elements. In the main group elements, there has been considerable research activity directed toward the identification of strontium and barium precursors, due both to the technological importance of mixed oxide phases and the inherent difficulties in obtaining volatile, complexes of these large metal ions. Aluminum, gallium, and indium have also been the subject of intense investigation, owing to the importance of many phases containing these elements. The group 4 and 5 elements titanium, zirconium, hafnium, niobium, and tantalum have been the subject of considerable precursor development activity, owing to the importance of several mixed oxide phases and the importance of zirconium and hafnium oxide for high permittivity gate materials in microelectronics devices. Growth of metal nitride films of these elements has also been an active area of research for use as barrier materials in microelectronics devices. The deposition of copper metal films from metal‐organic precursors is driven by the urgent need for copper metallization procedures in microelectronics device manufacturing. The current state of metal‐organic precursor development is presented for each of the other metallic elements.

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AuI and AgI Complexes with Tertiary Phosphines and Perfluorinated Carboxylates as Precursors for CVD of Gold and Silver

Cited by 42 publications

References 6 publications

CVD of AgI Complexes with Tertiary Phosphines and Perfluorinated Carboxylates—A New Class of Silver Precursors

CVD of AgI Complexes with Tertiary Phosphines and Perfluorinated Carboxylates—A New Class of Silver Precursors

Activity of TiO2 deposited by the CVD method on ammoxidized surface of a carbonaceous material in hydrogenation of styrene

Metallic Materials Deposition: Metal‐Organic PrecursorsBased in part on the article Metallic Materials Deposition: Metal–Organic Precursors by Herbert D. Kaesz, Alfred Zinn, & Lutz Brandt which appeared in theEncyclopedia of Inorganic Chemistry, First Edition.

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