Augustus Matthiessen: His Studies on Electrical Conductivities and the Origins of his “Rule” [Scanning Our Past]

Reif-Acherman, Simón

doi:10.1109/jproc.2015.2414487

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Cited by 6 publications

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“…There are numerous examples in the published literature, technology shows[50][51][52][53][54], etc., including the recent Proceedings of the IEEE special issue[28][29][30][31][32][33][34][35][36][37][38][39][40][41][42] and impending special issue in the IEEE Journal of Emerging and Selected Topics[55]. based processing, involving a series of additive and subtractive steps.…”

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confidence: 99%

Printed electronics : modeling, variations and bending

Zhou¹

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mentioning

confidence: 99%

Printed electronics : modeling, variations and bending

Zhou¹

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Electron mobility of SnO2 from first principles

Wang,

Bushick,

Pant

et al. 2024

Applied Physics Letters

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The transparent conducting oxide SnO2 is a wide bandgap semiconductor that is easily n-type doped and widely used in various electronic and optoelectronic applications. Experimental reports of the electron mobility of this material vary widely depending on the growth conditions and doping concentrations. In this work, we calculate the electron mobility of SnO2 from first principles to examine the temperature and doping concentration dependence and to elucidate the scattering mechanisms that limit transport. We include both electron–phonon scattering and electron-ionized impurity scattering to accurately model scattering in a doped semiconductor. We find a strongly anisotropic mobility that favors transport in the direction parallel to the c-axis. At room temperature and intrinsic carrier concentrations, the low-energy polar-optical phonon modes dominate scattering, while ionized-impurity scattering dominates above 1018 cm−3.

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