Augmented methods for growth and development of novel multi-cation oxides

Abstract

Multi-cation oxides with crystalline perfection known from single crystals of Si or Ge are a challenge not only for basic research but also towards a revolution of oxide electronic materials. Here, we present our approach for the synthesis of high-quality thin films of multi-cation oxides. We show that our synthesis method, using state-of the-art molecular beam epitaxy (MBE), facilitates for the design of new materials. We geared our MBE system with a precise rate control system of each constituent cation flux as well as activated oxygen (O*) and ozone (O 3 ). The resulting performances of our MBE setup are unmatched with respect to high-quality film growth as well as multi-cation flexibility by demonstrating growth of various cuprate-, scandate-, argentate-, titanate-, and ruthenate thin films. Such augmented methods are key to novel materials and go well beyond the artificial stacking of known materials and lattices.

A review of molecular beam epitaxy of ferroelectric BaTiO3films on Si, Ge and GaAs substrates and their applications

“…Since then, a variety of multiple-cation oxides have been epitaxially deposited by MBE on oxide substrates: SrTiO 3 , Ruddlesden–Popper phases, Bi 4 Ti 3 O 12 , Ba(Sr)TiO 3 , SrVO 3 , GdTiO 3 , BiFeO 3 , LaAlO 3 , PbTiO 3 , LaCrO 3 , SrCrO 3− δ , La 1− x Sr x FeO 3 , LaTiO 3.5 , La 2 Zr 2 O 7 , LaNiO 3 , La 2 NiO 4 , LaSrAlO 4 , and superlattices e.g. BaTiO 3 /SrTiO 3 or PbTiO 3 / SrTiO 3 to name only a few compounds and groups [29–54]. On Si substrates, epitaxial SrTiO 3 films are used as templates to grow a variety of complex oxides.…”

Overview of Novel Materials Creation Research at NTT

“…Here, we start with an explanation of how the unique characteristics of our MBE apparatuses allow for the creation of novel materials. A schematic illustration of our MBE set-up sui generis, which is totally tuned up for the growth of multi-cation oxides (complex oxides) [10], is shown in Fig. 1.…”