Auger effect as the origin of the fast-luminescent band of freshly anodized porous silicon

Mghaieth, Ridha; Maâref, H.; Mihalcescu, I.; Vial, Jean-Claude

doi:10.1103/physrevb.60.4450

Cited by 28 publications

(18 citation statements)

References 19 publications

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“…The decrease in relaxation time and the simultaneous formation of the Pauli-plateau strongly suggests an interplay between faster carrier relaxation and occupation of multiexcitonic states 25 . For τ r it is found that the data points follow a P −0.67±0.02 dependency strongly indicating that Auger processes mediate intersublevel relaxation 26 . This observation constitutes strong evidence that the occupation of the dot with multiple carriers mediates faster carrier capture and energy relaxation.…”

mentioning

confidence: 86%

“…This behaviour suggests a power-dependent change of the carrier capture and inter-sublevel relaxation times which are typically governed by Auger-like processes or LO-phonon emission in QDs 25 and will be discussed in relation to figures 3c and 4 below. The ultraslow carrier relaxation time for P = 0.48 W/cm 2 indicates the presence of an intrinsic phonon bottleneck 8 that, for stronger excitation levels, is masked by much faster carrier capture and relaxation via Auger-like processes with other charge carriers in the near vicinity of the quantum dot 26 . In similar off-chip detected time-resolved PL experiments, τ r typically is ≤ 100 ps 25 and does not show any indications of a bottleneck.…”

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confidence: 99%

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A carrier relaxation bottleneck probed in single InGaAs quantum dots using integrated superconducting single photon detectors

Reithmaier

Flassig

Hasch

et al. 2014

Applied Physics Letters

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Using integrated superconducting single photon detectors we probe ultra-slow exciton capture and relaxation dynamics in single self-assembled InGaAs quantum dots embedded in a GaAs ridge waveguide. Time-resolved luminescence measurements performed with on-and off-chip detection reveal a continuous decrease in the carrier relaxation time from 1.22 ± 0.07 ns to 0.10 ± 0.07 ns upon increasing the number of non-resonantly injected carriers. By comparing off-chip time-resolved spectroscopy with spectrally integrated on-chip measurements we identify the observed dynamics in the rise time (τ r ) as arising from a relaxation bottleneck at low excitation levels. From the comparison with the temporal dynamics of the single exciton transition with the on-chip emission signal, we conclude that the relaxation bottleneck is circumvented by the presence of charge carriers occupying states in the bulk material and the two-dimensional wetting layer continuum. A characteristic τ r ∝ P −2/3 power law dependence is observed suggesting Auger-type scattering between carriers trapped in the quantum dot and the two-dimensional wetting layer continuum which circumvents the phonon relaxation bottleneck.Semiconductor based photonic information technology is rapidly being pushed to the quantum limit where single photon states can be generated and manipulated in nanoscale optical circuits 1 . Over recent years quantum dots (QDs) embedded in such semiconductor systems have been shown to be excellent sources of quantum light 2-4 and have shown their suitability for use as a gain medium in QD lasers 5-7 . However, for short response times and fast operation of such devices, injected charge carriers must relax rapidly from continuum wetting layer electronic states into the lasing state. For a fully discrete electronic structure, efficient relaxation is expected to be hindered by phonon bottleneck phenomena 8 , caused by the large energetic spacing of QD energy levels that inhibits single-phonon mediated scattering processes 9 . To directly observe such relaxation bottleneck effects, superconducting single photon detectors (SSPDs) are suitable due to their near unity quantum efficiency and picosecond timing resolution 10,11 . Building up on recent progress in this field 12-14 , we developed highly efficient 15,16 NbNSSPDs on GaAs 17 and demonstrated the monolithic integration of InGaAs QDs as single photon emitters together with waveguides and detectors on a single chip 18 . In this letter, we compare photoluminescence (PL) dynamics recorded from a single dot with confocal off-chip detectors with on-chip PL using integrated SSPDs that provide temporal resolution better than 70 ps. By probing the carrier capture and energy relaxation dynamics

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mentioning

confidence: 86%

mentioning

confidence: 99%

A carrier relaxation bottleneck probed in single InGaAs quantum dots using integrated superconducting single photon detectors

Reithmaier

Flassig

Hasch

et al. 2014

Applied Physics Letters

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“…For sample B the power coefficient b is found to be very close to 2/3 ͑b = 0.72Ϯ 0.01͒, which is the signature of a three particle Auger recombination mechanism. 29 Although emission from sample B is more intense ͓triangle-dotted line in Fig. 4͑a͔͒, the power coefficient is higher for sample A ͑b = 0.83Ϯ 0.05͒.…”

Section: Visible Pl Spectroscopymentioning

confidence: 99%

“…3, a very fast decay ͑first few microseconds͒ is observed which is attributed to Auger recombination within the nanoparticle. 29 To check this hypothesis, we have measured the visible PL intensity of samples A and B as a function of excitation photon flux ⌽. The results are reported in Fig.…”

Section: Visible Pl Spectroscopymentioning

confidence: 99%

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Energy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle samples

Pitanti

Navarro-Urriós

Prtljaga

et al. 2010

Journal of Applied Physics

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We report a spectroscopic study about the energy transfer mechanism among silicon nanoparticles ͑Si-np͒, both amorphous and crystalline, and Er ions in a silicon dioxide matrix. From infrared spectroscopic analysis, we have determined that the physics of the transfer mechanism does not depend on the Si-np nature, finding a fast ͑Ͻ200 ns͒ energy transfer in both cases, while the amorphous nanoclusters reveal a larger transfer efficiency than the nanocrystals. Moreover, the detailed spectroscopic results in the visible range here reported are essential to understand the physics behind the sensitization effect, whose knowledge assumes a crucial role to enhance the transfer rate and possibly employing the material in optical amplifier devices. Joining the experimental data, performed with pulsed and continuous-wave excitation, we develop a model in which the internal intraband recombination within Si-np is competitive with the transfer process via an Auger electron-"recycling" effect. Posing a different light on some detrimental mechanism such as Auger processes, our findings clearly recast the role of Si-np in the sensitization scheme, where they are able to excite very efficiently ions in close proximity to their surface.

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Time‐Resolved Synchrotron Radiation Excited Optical Luminescence: Light‐Emission Properties of Silicon‐Based Nanostructures

Sham

Rosenberg

2007

ChemPhysChem

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The recent advances in the study of light emission from matter induced by synchrotron radiation: X-ray excited optical luminescence (XEOL) in the energy domain and time-resolved X-ray excited optical luminescence (TRXEOL) are described. The development of these element (absorption edge) selective, synchrotron X-ray photons in, optical photons out techniques with time gating coincide with advances in third-generation, insertion device based, synchrotron light sources. Electron bunches circulating in a storage ring emit very bright, widely energy tunable, short light pulses (<100 ps), which are used as the excitation source for investigation of light-emitting materials. Luminescence from silicon nanostructures (porous silicon, silicon nanowires, and Si-CdSe heterostructures) is used to illustrate the applicability of these techniques and their great potential in future applications.

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Auger effect as the origin of the fast-luminescent band of freshly anodized porous silicon

Abstract: International audienc

Cited by 28 publications

References 19 publications

A carrier relaxation bottleneck probed in single InGaAs quantum dots using integrated superconducting single photon detectors

A carrier relaxation bottleneck probed in single InGaAs quantum dots using integrated superconducting single photon detectors

Energy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle samples

Time‐Resolved Synchrotron Radiation Excited Optical Luminescence: Light‐Emission Properties of Silicon‐Based Nanostructures

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