1977
DOI: 10.1063/1.89694
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Auger coefficients for highly doped and highly excited silicon

Abstract: The recombination kinetics in highly doped p- and n-type silicon has been investigated at 77, 300, and 400 K through the radiative band-to-band recombination. The minority-carrier lifetime depends quadratically on the doping concentration as expected for Auger recombination. The Auger coefficients at 300 K for p- and n-type silicon are found to be Cp=9.9×10−32 cm6 s−1 and Cn=2.8×10−31 cm6 s−1. They are nearly independent of temperature in the range investigated. The Auger coefficient in highly excited pure sil… Show more

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Cited by 759 publications
(192 citation statements)
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“…This coefficient is rather independent of material (typically 10 −32 -10 −30 cm 6 /s and it is in the order of 10 −31 for indirect transition in Si and Ge and GaAs [32][33][34][35]. We want to estimate the Auger effect using an approximate model that is material independent, and we therefore set C a = 10 −31 cm 6 /s for all considered materials.…”
Section: Resultsmentioning
confidence: 99%
“…This coefficient is rather independent of material (typically 10 −32 -10 −30 cm 6 /s and it is in the order of 10 −31 for indirect transition in Si and Ge and GaAs [32][33][34][35]. We want to estimate the Auger effect using an approximate model that is material independent, and we therefore set C a = 10 −31 cm 6 /s for all considered materials.…”
Section: Resultsmentioning
confidence: 99%
“…As input for the simulations, the fundamental surface recombination velocities for electrons and holes were S n0 ¼ 6500 cm/s and S p0 ¼ 65 cm/s, respectively. In the simulations, Fermi-Dirac statistics were used, in combination with the band-gap narrowing model of Schenk [43], the Auger model of Dziewior and Schmid [55], and the Klaassen mobility model [56]. The bulk SRH lifetimes were τ p0 ¼τ n0 ¼ 1 ms.…”
Section: Role Of Surface Doping Concentrationmentioning
confidence: 99%
“…In indirect band-gap semiconductors, like Si, the SRH is dominant at moderate carrier densities (up to 10 18 cm −3 ), while the Auger recombination dominates under high doping and high injection condition (see, e.g., [22]). This implies that rad is enough higher than SRH and Auger and thus in (5) the second term is usually negligible.…”
Section: Auger Recombinationmentioning
confidence: 99%