Auger and photoluminescence analysis of ZnO nanowires grown on AlN thin film

Effect of polar and non-polar surfaces of ZnO nanostructures on photocatalytic properties

“…4, both samples show a UV emission centered at 380 nm and a defect emission in the region of 450-700 nm in the spectra. Both PL spectra are similar to the ZnO PL spectra detected in many works [31][32][33][34]. The emission centered at 380 nm (3.26 eV) is in good agreement with the typically reported free exciton peak position [35,36], and could be explained by the near-band-edge emission (3.37 eV).…”

Structural and optical properties of SbAl co-doped ZnO nanowires synthesized using Nanoparticle Assisted Pulsed Laser Deposition (NAPLD) with Sb as catalyst

“…6(b) corresponds to E 2H -E 2L and E 2 H modes of non polar optical phonon respectively. These two peaks confirm that the Sb Al co-doped ZnO nanowires posses' good crystal structure [30][31][32][33]. The peak at 380 cm −1 corresponding to the A 1 T modes.…”

“…With increase in annealing temperature to 650 • C, increase in intensity of the UV emission was observed. Thus the formation of the single ionized oxygen vacancies has been considerably reduced [36,30]. The experimental results discussed in detail, throws a light on the mechanism of Sb Al co-doped nanowires.…”

Metal Chalcogenide Hierarchical Nanostructures for Energy Conversion Devices

“…In addition, thermal evaporation provides a particularly cost-effective and high-quality equilibrium process, in which the morphology of nanostructures can be controlled by the content and melting points of the sources and substrates used [19,20]. Thus, this process is frequently found in the literature, where researchers have presented the use of this model for growing semiconductor nanostructures.…”