2020
DOI: 10.1088/1361-6463/ab6fcd
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Au grating on SiC substrate: simulation of high performance plasmonic Schottky barrier photodetector in visible and NIR regions

Abstract: Plasmonically enhanced light absorption in Schottky barrier photodetectors (PDs) can be achieved by engineering metallic nanostructures. In this context, gold (Au) gratings on titanium (Ti)/silicon carbide (SiC) based Schottky barrier is proposed in this work for photodetection application. Further, the effects of various grating parameters and incident angle on absorbance are demonstrated. The grating based structure is able to provide ~85% incident light absorption leading to a significantly high responsivit… Show more

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Cited by 13 publications
(4 citation statements)
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“…Such spatial localization of the electromagnetic field at the incident photon energy greater than the band gap of the semiconductor contributes to an increase in the generation of electron-hole pairs in it near the contact with the metal and a corresponding increase in the photocurrent in the presence of a built-in electric field separating the charge carriers. At energies lower than the band gap, the excitation of hot electrons in the metal film with subsequent ballistic transport to the semiconductor region with the built-in electric field is possible [8][9][10][11]. Thus, the spectral sensitivity range of such photodetectors can extend beyond the band-to-band generation region by expanding into the red spectral region.…”
Section: Introductionmentioning
confidence: 99%
“…Such spatial localization of the electromagnetic field at the incident photon energy greater than the band gap of the semiconductor contributes to an increase in the generation of electron-hole pairs in it near the contact with the metal and a corresponding increase in the photocurrent in the presence of a built-in electric field separating the charge carriers. At energies lower than the band gap, the excitation of hot electrons in the metal film with subsequent ballistic transport to the semiconductor region with the built-in electric field is possible [8][9][10][11]. Thus, the spectral sensitivity range of such photodetectors can extend beyond the band-to-band generation region by expanding into the red spectral region.…”
Section: Introductionmentioning
confidence: 99%
“…Also, the ability for the HEPDs to work in the telecommunication band and integrate with waveguides shows its great potential in photonic integrated circuits [5,6]. In the past decade, researchers have conducted a lot of plasmonic structures including metal nanoparticles, gratings, and nanorods to excite the SPs or guided mode resonance to enhance the light absorption of HEPDs [7][8][9][10][11][12][13][14][15].…”
Section: Introductionmentioning
confidence: 99%
“…Barrier diodes are used in many areas, from energy to optoelectronic systems, especially sensors. [4][5][6][7] One of these diodes is 6H-SiC-based Schottky diodes. These diodes have attracted attention with their operability, especially in extreme conditions.…”
Section: Introductionmentioning
confidence: 99%