Au-Cu Ohmic Contacts for p + GaAs

Akdogan, Ilhami G.; Parker, M. A.

doi:10.1149/1.1887185

Cited by 5 publications

(2 citation statements)

References 13 publications

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“…As presented in Table I, all the reflectors showed low contact resistivity of the order of 10 À6 XÁcm 2 , which are lower than reported contact resistivities of non-alloyed contacts. 27 These results show that an ohmic contact is formed even without annealing due to high doping in the GaAs layer and high reflectivity of the metal reflector is retained.…”

Section: à3mentioning

confidence: 79%

“…20 Typical contact resistivities for p-GaAs are of the order of 10 À5 XÁcm 2 for non-alloyed metal contacts and 10 À7 XÁcm 2 for alloyed ones. 26,27 The contact resistivity of the Ag/Cu back contact reflectors was measured using the Transmission Line Method (TLM). The contact pads for TLM were fabricated by photolithography onto a separately grown p-type GaAs layer that had a doping level of $10 20 cm…”

Section: -2mentioning

confidence: 99%

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Enhancement of photocurrent in GaInNAs solar cells using Ag/Cu double-layer back reflector

Aho

Tukiainen

et al. 2016

Applied Physics Letters

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The effect of a Ag/Cu-based double-layer back reflector on current generation in GaInNAs single-junction solar cell is reported. Compared to Ti/Au reflector, the use of Ag/Cu led to a 28% enhancement of short-circuit current density, attaining a value of ∼14 mA/cm2 at AM1.5D (1000 W/m2) under a GaAs filter. The enhanced current generation is in line with requirements for current-matching in GaInP/GaAs/GaInNAs triple-junction solar cells. The Ag/Cu reflectors also had a low contact resistivity of the order of 10−6 Ω·cm2 and none of the samples exhibited notable peeling of metals in the adhesion tests. Moreover, no discernible diffusion of the metals into the semiconductor was observed after thermal annealing at 200 °C.

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Section: à3mentioning

confidence: 79%

Section: -2mentioning

confidence: 99%

Enhancement of photocurrent in GaInNAs solar cells using Ag/Cu double-layer back reflector

Aho

Tukiainen

et al. 2016

Applied Physics Letters

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Quantum Dot-Based Thin-Film III–V Solar Cells

Cappelluti

Tukiainen

Aho

et al. 2020

Quantum Dot Optoelectronic Devices

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Lower limits to metal-semiconductor contact resistance: Theoretical models and experimental data

Baraskar

Gossard

Rodwell

2013

Journal of Applied Physics

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We calculate the minimum feasible contact resistivity to n-type and p-type In 0.53 Ga 0.47 As, InAs, GaAs, GaSb, InP, and InSb. The calculations consider image force lowering and assume either parabolic or non-parabolic energy dispersion in the semiconductor; their results are compared with recent experimental data. Among significant results, the measured contact resistivity to n-In 0.53 Ga 0.47 As at a carrier concentration of 5 Â 10 19 cm À3 is only 2.3:1 higher than that calculated assuming a 0.2 eV barrier potential, and the measured contact resistivity is only 9.0:1 larger than the Landauer quantum conductivity limit at this carrier concentration. These results indicate that, with the surface preparation procedures presently employed, surface contamination does not markedly increase the interface resistance, and that the transmission coefficient for carriers crossing the interface exceeds 10%. V

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Au-Cu Ohmic Contacts for p + GaAs

Cited by 5 publications

References 13 publications

Enhancement of photocurrent in GaInNAs solar cells using Ag/Cu double-layer back reflector

Enhancement of photocurrent in GaInNAs solar cells using Ag/Cu double-layer back reflector

Quantum Dot-Based Thin-Film III–V Solar Cells

Lower limits to metal-semiconductor contact resistance: Theoretical models and experimental data

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