Au–Au Surface-Activated Bonding and Its Application to Optical Microsensors With 3-D Structure

Higurashi, Eiji; Chino, D.; Suga, Tadatomo; Sawada, Renshi

doi:10.1109/jstqe.2009.2020812

Cited by 104 publications

(41 citation statements)

References 15 publications

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“…In another study, the high temperature issue in alignment was addressed using low-temperature bonding to avoid re-melting of the bumps in highly integrated micro-optical systems. This method gets rid of the surface tensions of melted bumps (liquid state) that may displace connected structures [54,55]. Low-temperature integration technology based on passive optical alignment using SAB has been demonstrated to minimize alignment offset induced by mismatch of materials' CTE [56].…”

Section: Optical Couplingmentioning

confidence: 99%

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Howlader

Deen

2015

Photonics

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Abstract:Silicon-based integrated systems are actively pursued for sensing and imaging applications. A major challenge to realize highly sensitive systems is the integration of electronic, optical, mechanical and fluidic, all on a common platform. Further, the interface quality between the tiny optoelectronic structures and the substrate for alignment and coupling of the signals significantly impacts the system's performance. These systems also have to be low-cost, densely integrated and compatible with current and future mainstream technologies for electronic-photonic integration. To address these issues, proper selection of the fabrication, integration and assembly technologies is needed. In this paper, wafer level bonding with advanced features such as surface activation and passive alignment for vertical electrical interconnections are identified as candidate technologies to integrate different electronics, optical and photonic components. Surface activated bonding, superior to other assembly methods, enables low-temperature nanoscaled component integration with high alignment accuracy, low electrical loss and high transparency of the interface. These features are preferred for the hybrid integration of silicon-based micro-opto-electronic systems. In future, new materials and assembly technologies may emerge to enhance the performance of these micro systems and reduce their cost. The article is a detailed review of bonding techniques for electronic, optical and photonic components in silicon-based systems.

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Section: Optical Couplingmentioning

confidence: 99%

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Howlader

Deen

2015

Photonics

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“…Conventionally, proposed low-temperature AuAu bonding techniques have included plasma irradiation 8) or ultrasonic bonding. 9) However, plasma irradiation cleaning requires high-vacuum conditions (pressure less than 10 Pa), 10) which reduces the throughput of the bonding process.…”

Section: )mentioning

confidence: 99%

Vacuum Ultraviolet Irradiation Treatment for Reducing Gold–Gold Bonding Temperature

et al. 2013

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Low-temperature AuAu bonding was achieved under vacuum ultraviolet irradiation in the presence of oxygen gas (VUV/O 3 ). The Au surfaces obtained after the VUV/O 3 treatment were analyzed by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) measurements. The results indicate that the amount of carbon-based contaminants was dramatically decreased and that there was no serious damage to Au surfaces caused by the VUV/O 3 treatment. The AuAu bonding temperature was successfully reduced to 150°C after the VUV/ O 3 treatment. The average shear strength was approximately 56 MPa, and cross-sectional scanning electron microscopy (SEM) images of the bonded samples confirmed the absence of voids and cracks. Therefore, VUV/O 3 treatment is highly effective for achieving low-temperature AuAu bonding.

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“…X-ray photoelectron spectroscopy (XPS) studies have shown that Au surfaces coated with dodecanethiol SAMs have less oxygen and carbon contaminants than uncoated Au surfaces [10,12,13]. As a result, the surfaces can be bonded at lower temperatures and there are even reports of increased bond strength [10,11,14].…”

Section: Technical Approachmentioning

confidence: 99%

“…Temperatures lower than 200°C are desirable to prevent thermal damage to the devices, as are minimal bonding loads to prevent cracking of thinned die/wafers. It is currently possible to bond Au to Au at 150 o C or less under moderate loads provided the Au surfaces are Argon plasma cleaned [10,11,14,15]. Even more impressive results can be achieved if the surfaces are ultra-planar: room temperature bonding in 60 h without any load [16]!…”

Section: Bondingmentioning

confidence: 99%

Chemical strategies for die/wafer submicron alignment and bonding.

Martin¹,

Baca²,

Chu³

et al. 2010

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This late-start LDRD explores chemical strategies that will enable sub-micron alignment accuracy of dies and wafers by exploiting the interfacial energies of chemical ligands. We have micropatterned commensurate features, such as 2-d arrays of micron-sized gold lines on the die to be bonded. Each gold line is functionalized with alkanethiol ligands before the die are brought into contact. The ligand interfacial energy is minimized when the lines on the die are brought into registration, due to favorable interactions between the complementary ligand tails.After registration is achieved, standard bonding techniques are used to create precision permanent bonds. We have computed the alignment forces and torque between two surfaces patterned with arrays of lines or square pads to illustrate how best to maximize the tendency to align. We also discuss complex, aperiodic patterns such as rectilinear pad assemblies, concentric circles, and spirals that point the way towards extremely precise alignment. 4 ACKNOWLEDGMENTSWe thank the LDRD office and the Nanoscience to Microsystems Investment Area for providing the funding for this project. We would like to acknowledge

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Au–Au Surface-Activated Bonding and Its Application to Optical Microsensors With 3-D Structure

Cited by 104 publications

References 15 publications

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Vacuum Ultraviolet Irradiation Treatment for Reducing Gold–Gold Bonding Temperature

Chemical strategies for die/wafer submicron alignment and bonding.

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Au–Au Surface-Activated Bonding and Its Application to Optical Microsensors With 3-D Structure

Cited by 104 publications

References 15 publications

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Vacuum Ultraviolet Irradiation Treatment for Reducing Gold&ndash;Gold Bonding Temperature

Chemical strategies for die/wafer submicron alignment and bonding.

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Product

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Vacuum Ultraviolet Irradiation Treatment for Reducing Gold–Gold Bonding Temperature