Au-assisted electroless etching of silicon in aqueous HF/H2O2 solution

Megouda, Nacéra; Hadjersi, Toufik; Piret, Gaëlle; Boukherroub, Rabah; Elkechai, Omar

doi:10.1016/j.apsusc.2009.01.075

Cited by 56 publications

(35 citation statements)

References 14 publications

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“…The formation of a porous layer structure through chemical etching or stain etching is also achieved by application of impurities onto the Si surface [28][29][30][31][32][33].…”

Section: Review Of Etching Methods Applied To Siliconmentioning

confidence: 99%

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Microstructural characterisation of metallurgical grade porous silicon nanosponge particles

2011

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Porous silicon finds numerous applications in the areas of bio-technology, drug delivery, energetic materials and catalysis. Recent studies by Vesta Sciences have led to the development of porous silicon nanosponge particles from metallurgical grade silicon powder through their own patented chemical etching process (Irish patent no. IE20060360). This discovery paves the way for a more economical production method for porous silicon. The work presented here studies the structural morphology of the porous silicon nanosponge particles using high resolution electron microscopy techniques combined with porisometry type measurements where appropriate. The related surface pore structure is examined in detail using Scanning Electron Microscopy and Transmission Electron Microscopy techniques while the internal pore structure is explored using Focused Ion Beam milling and ultramicrotomed cross-sections. Three samples of the silicon particles were analysed for this study which include the starting metallurgical grade silicon powder and two samples that have been chemically etched. Analysis of the etched samples indicates a disordered pore structure with pore diameters ranging up to 15nm on porous silicon particles ranging up to 5µm in size. Crystallographic orientation did not appear to affect the surface pore opening diameter. Internal pore data indicated pore depths of up to 1 µm dependant on the particle size and etching conditions applied.

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“…The formation of a porous layer structure through chemical etching or stain etching is also achieved by application of impurities onto the Si surface [28][29][30][31][32][33].…”

Section: Review Of Etching Methods Applied To Siliconmentioning

confidence: 99%

“…During the etching process, these impurities react with the nitric and hydrofluoric acid mixture causing hole initiation and porous silicon formation at the particle surfaces [18] as also described for other chemical etching techniques used with Si [28][29][30][31][32][33].…”

Section: Review Of Etching Methods Applied To Siliconmentioning

confidence: 99%

Microstructural characterisation of metallurgical grade porous silicon nanosponge particles

2011

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“…Previous reports have shown that the application of certain elements onto a Si surface will induce porous layer formation once electro-chemically or chemically etched in a HF based solution. Metal-assisted etching using thin films of Pt and Ag on Si has shown PS formation [23][24][25][26] and incorporating Fe into HF solutions has also been shown to affect the etching process to some degree. 27 Al has already been shown to induce a porous layer structure formation in Si in a study which chemically etched a thin Al film on a Si substrate.…”

Section: Experimental Results and Discussionelemental Analysismentioning

confidence: 99%

“…Other etching methods derived from standard electrochemical and chemical etching processes include metal-assisted etching and in this method, PS is produced by electroless etching and galvanic displacement reactions between certain metallic ions at the surface in a fluoride-containing electrolyte. [23][24][25][26] The application of a thin metallic film or metal particles (Au, Pt, Al, Ag, palladium (Pd)) onto the surface of the Si substrate results in a cathodicanodic reaction (metal film or particle being the cathode) and the Si material (when oxidised becoming the anode) which then results in a boring or sinking of the metal particles into the Si surface creating pore formation. Various metallic-Si interface reactions can be explained but essentially in the case of Ag particles for example, the Si beneath the Ag is oxidised by hole injection when the oxidising agent (hydrogen peroxide (H 2 O 2 ), sodium persulfate (Na 2 S 2 O 8 ) or HNO 3 are typically used in the etching solution) is reduced on the Ag.…”

Section: Porosity Formation In Metallurgical Grade Siliconmentioning

confidence: 99%

Compositional characterisation of metallurgical grade silicon and porous silicon nanosponge particles

et al. 2013

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Porous silicon is generally achieved through electro-chemical etching or chemical etching of bulk silicon in hydrofluoric acid based solutions. The work presented here explores the effect of a chemical etching process on a metallurgical grade silicon powder. It is found that the metallurgical grade silicon particles contain surface bound impurities that induce a porous structure formation upon reaction with the chemical etchant applied. The correlation between the resultant porous structure formed due to the material composition is examined in detail. The elemental composition is determined using a combination of X-ray Photoelectron Spectroscopy and Time of Flight Secondary Ion Mass Spectroscopy. The porous structure is analysed using Transmission Electron Microscopy and Scanning Electron Microscopy. Three samples of the silicon particles analysed for this study include an un-etched bulk silicon powder sample and two samples of chemically etched powder. Pore formation within the particles is found to be dependent on the presence, dispersion, and local concentration of surface bound impurities within the starting powder.

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“…Metal-assisted electroless etching is one of top-down approaches that allow forming silicon nanostrures on silicon wafer [1][2][3]. Depending on experimental parameters, porous Si with different morphologies, nanowires (SiNWs) as well as nanoholes of different shapes can be produced [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Effect of the experimental parameters on the shape and formation kinetics of SiNWs formed by electroless chemical etching in aqueous AgNO₃/HF/H₂O₂ solution

Nafie

Braham

Rabha

et al. 2014

Phys. Status Solidi C

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is an open access repository that collects the work of Arts et Métiers ParisTech researchers and makes it freely available over the web where possible. The discovery at the beginning of 1990 of carbon nanotubes awaked the interest for one-dimensional (1D) nanostructures. Currently, silicon nanowires (SiNWs) formed by electroless chemical etching in aqueous Ag-NO 3 /HF/H 2 O 2 solution, arouse great interest due to their physical properties and potential applications. The understanding of physical-chemical phenomena that occur during the formation of SiNWs, the effect of etching parameters on their morphology, the formation mechanism and formation kinetic raise many questions. In this paper, we investigate the effect of etching parameters; namely AgNO 3 concentration, HF concentration, etching time and the volume of H 2 O 2 on the shape of obtained nanostructures. The formation kinetic was investigated by studying the effect of the etching time on the morphology of obtained nanostructures. SiNWs studied in this work were formed on a P type and (100) oriented monocrystalline silicon substrate. Characterization of formed SiNWs was performed using a scanning electron microscope (SEM).

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Au-assisted electroless etching of silicon in aqueous HF/H2O2 solution

Cited by 56 publications

References 14 publications

Microstructural characterisation of metallurgical grade porous silicon nanosponge particles

Microstructural characterisation of metallurgical grade porous silicon nanosponge particles

Compositional characterisation of metallurgical grade silicon and porous silicon nanosponge particles

Effect of the experimental parameters on the shape and formation kinetics of SiNWs formed by electroless chemical etching in aqueous AgNO₃/HF/H₂O₂ solution

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Au-assisted electroless etching of silicon in aqueous HF/H2O2 solution

Cited by 56 publications

References 14 publications

Microstructural characterisation of metallurgical grade porous silicon nanosponge particles

Microstructural characterisation of metallurgical grade porous silicon nanosponge particles

Compositional characterisation of metallurgical grade silicon and porous silicon nanosponge particles

Effect of the experimental parameters on the shape and formation kinetics of SiNWs formed by electroless chemical etching in aqueous AgNO3/HF/H2O2 solution

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Effect of the experimental parameters on the shape and formation kinetics of SiNWs formed by electroless chemical etching in aqueous AgNO₃/HF/H₂O₂ solution