Au/As2Se3/Ag/As2Se3/Yb Schottky Barriers Designed as Multifunctional Devices

Harbi, S. R. Al; Qasrawi, A.F.

doi:10.1109/ted.2020.2968145

Cited by 3 publications

(3 citation statements)

References 22 publications

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“…results in a potential barrier of 1.29 eV. Figure 1 (d) illustrates the band diagram of the p-Schottky at the p-SiO 2 side of the device which is coated with Yb point contact (q 2.51 Yb f = eV [23]). The potential barrier at the Yb/SiO 2 interface…”

Section: Resultsmentioning

confidence: 99%

“…ITO/SeO 2 /Ag devices performed as band stop filter appropriate for 5G technologies.NC effect originating from heterojunction interfaces can be attributed to the minority -carrier injection caused by accumulation of minority carriers at one of the interfaces (Au/Si, Si/SeO 2 , SeO 2 /SiO 2 and Yb/SiO 2 ). Surface charges accumulation could also account for this phenomenon [15,23].…”

Section: Resultsmentioning

confidence: 99%

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Optically controlled n −Si/p −SeO₂/p −SiO₂ microwave resonators designed for 5G/6G communication technology

Qasrawi

2023

Phys. Scr.

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Herein n-Si/p-SiO2 interfaces comprising layers of p-SeO2 are employed as an optically controllable microwave resonators. The stacked layers of SeO2 (500 nm) and SiO2 (50 nm) were deposited onto n-type Si thin crystals by the thermal evaporation technique under a vacuum pressure of 10-5 mbar. Ytterbium and Au metals were coated onto SiO2 and Si layers, respectively, to form Schottky arms. Energy band diagram analyses were performed to confirm the formation of doubled conduction and valence band offsets. These offsets create energy barriers and potential wells that contribute to the bistable behavior. Photo-impedance spectroscopic measurements were conducted on the device under blue light, demonstrating its ability to function as a light-power tunable microwave resonator and MOS capacitor. In the absence of light, negative capacitance (NC) effects were observed above a driving frequency of 1.07 GHz. As the device was exposed to light and the light power increased, the frequency range of NC effects shifted to higher driving frequencies. Furthermore, the range of NC effects became narrower with increasing light power, indicating a more limited frequency range for the manifestation of negative capacitance. In addition, n-Si/p-SeO2/p-SiO2 microwaves resonators displayed high cutoff frequency exceeding 0.10 THz at driving frequency of 1.07 GHz in the dark. The driving frequency also shifted toward larger values as light power is increased indicating the ability to optically control the cutoff frequency range and value. The high response of the capacitance, conductance, cutoff frequency spectra and the dependence of capacitance-voltage characteristics on incident light power nominate the device as microwave resonators and MOS electro-optic devices suitable for 5G/6G communication technology.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Optically controlled n −Si/p −SeO₂/p −SiO₂ microwave resonators designed for 5G/6G communication technology

Qasrawi

2023

Phys. Scr.

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“…Yb with the electronic configuration (

4 f^{14} 6 s^{2}

) is at higher orbital states than Fe (

3 d^{6} 4 s^{2}

) and Se (

4 s^{2} 4 p^{4}

). [ 8 ] Orbital overlapping increases the free electron density by forming bonds between monolayers. [ 9 ] Yb also exhibits low metal work function (2.51 eV) which is very appropriate for electronic applications.…”

Section: Introductionmentioning

confidence: 99%

Iron Selenide Nanowire Bundles for Microwave Communication Technology

Qasrawi,

Toubasi

2023

Physica Status Solidi (a)

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Herein stacked layers of FeSe2 deposited onto ytterbium substrates using the thermal evaporation technique under a vacuum pressure of 10‐5 mbar are observed to form nanowire bundles (NB). Structural investigations on these NBs have shown the preferred growth of orthorhombic FeSe2 in addition to hexagonal ytterbium selenide as a minor phase in the structure of FeSe2. Impedance spectroscopy analyses conducted in the frequency domain of 0.01‐1.80 GHz shown that FeSe2 stacks can exhibit a negative capacitance effect and band stop filter characteristics. For these band stop filters, the refection coefficient (S11), the voltage standing wave ratios (VSWR) and the return loss (Lr) spectra displayed optimum values at a notch frequency of 0.87 GHz. In addition, computational analysis using Lorentz Oscillator (LO) Model has shown that the negativity of the capacitance is dominated by two oscillators centered at 0.08 GHz and 1.25 GHz. On the other hand, the insertion of aluminum nanosheets between the stacked layers of FeSe2 has been observed to decrease the negativity of the capacitance, increase the values of S11 and Lr and bring the VSWR closer to ideality. FeSe2 nanowire bundles resulting from FeSe2 stacks comprising Al nanosheets are considered suitable for microwave communication technology.This article is protected by copyright. All rights reserved.

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Effects of Au nanoslabs on the performance of CdO thin films designed for optoelectronic applications

Alharbi

Qasrawi

2021

Physica E: Low-dimensional Systems and Nanostructures

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Au/As₂Se₃/Ag/As₂Se₃/Yb Schottky Barriers Designed as Multifunctional Devices

Cited by 3 publications

References 22 publications

Optically controlled n −Si/p −SeO₂/p −SiO₂ microwave resonators designed for 5G/6G communication technology

Optically controlled n −Si/p −SeO₂/p −SiO₂ microwave resonators designed for 5G/6G communication technology

Iron Selenide Nanowire Bundles for Microwave Communication Technology

Effects of Au nanoslabs on the performance of CdO thin films designed for optoelectronic applications

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Au/As2Se3/Ag/As2Se3/Yb Schottky Barriers Designed as Multifunctional Devices

Cited by 3 publications

References 22 publications

Optically controlled n −Si/p −SeO2/p −SiO2 microwave resonators designed for 5G/6G communication technology

Optically controlled n −Si/p −SeO2/p −SiO2 microwave resonators designed for 5G/6G communication technology

Iron Selenide Nanowire Bundles for Microwave Communication Technology

Effects of Au nanoslabs on the performance of CdO thin films designed for optoelectronic applications

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Product

Resources

About

Au/As₂Se₃/Ag/As₂Se₃/Yb Schottky Barriers Designed as Multifunctional Devices

Optically controlled n −Si/p −SeO₂/p −SiO₂ microwave resonators designed for 5G/6G communication technology

Optically controlled n −Si/p −SeO₂/p −SiO₂ microwave resonators designed for 5G/6G communication technology