Attainment of high sensitivity at elevated operating temperatures with staring hybrid HgCdTe-on-sapphire focal plane arrays

Kozlowski, Lester J.; McLevige, W. V.; Cabelli, Scott A.; Vanderwyck, A. H. B.; Cooper, Donald E.; Blazejewski, E. R.; Vural, Kadri; Tennant, W. E.

doi:10.1117/12.163405

Cited by 22 publications

(10 citation statements)

References 7 publications

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“…Inserting expression (7) in expression (8) and taking into account that UsRxNxi, one obtains that for given circuit the injection coefficient is determined by source potential to thermal potential ratio. qU nkT -.…”

Section: Testing Modementioning

confidence: 99%

Readout device processing electronics for IR linear and focal plane arrays

Sizov

Derkach²,

Kononenko³

et al. 1999

SPIE Proceedings

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Silicon read-out devices with input direct injection and buffered direct injection circuits and charge coupled devices (CCD) multiplexers to be used with or ptnphotovoltaic (PV) multielement arrays were designed, manufactured and tested in T77-300 K temperature region. Into these read-out devices were incorporated the testing switches which attach the sources of direct injection transistors to the common load resistors to imitate the output signal of mercury cadmium telluride (MCT) photodiodes. The silicon read-out devices for 2x64 n-p-or p+-n.. linear arrays and 2x4x 128(144) time delay and integration (TDI) arrays with skimming and partitioning functions were manufactured by n-or p-channel MOS teclmology with buried channel CCD register. The designed CCD readout devices are driven with four-or two-phase clock pulses.

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Section: Testing Modementioning

confidence: 99%

Readout device processing electronics for IR linear and focal plane arrays

Sizov

Derkach²,

Kononenko³

et al. 1999

SPIE Proceedings

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“…Digital imager architectures are dominated by in-pixel readout stages containing analog-integrator preamplification and a posterior sampler-and-hold. In the case of large IR staring-FPAs, straightforward input topologies like source follower per detector (SFD) [31][32][33][34][35], direct injection (DI) [36][37][38][39] and gate modulation input (GMI) [31,40] are still popular because of their compactness and reduced power consumption [19]. Other complex circuit techniques like buffered direct injection (BDI) [36,41] and capacitive transimpedance amplifier (CTIA) [42][43][44]39] offer higher performance by providing excellent bias control, high injection efficiency, linearity and lower noise figures.…”

Section: Readout Techniquesmentioning

confidence: 99%

Low-Power CMOS Digital Pixel Imagers for High-Speed Uncooled PbSe IR Applications

Margarit¹

2017

Springer Theses

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Certifiquen ResumLa present tesi doctoral descriu la recerca i el desenvolupament d'una nova tecnologia monolítica d'imatgeria infraroja de longitud d'ona mitja (MWIR), no refrigerada i de baix cost, per a usos industrials d'alta velocitat. El treball pren el relleu dels últims avenços assolits pel soci industrial NIT S.L. en el camp dels detectors MWIR de PbSe depositats en fase vapor (VPD), afegint-hi coneixement fonamental en la investigació de noves tècniques de disseny de circuits VLSI analògics i mixtes pel desenvolupament del dispositiu integrat de lectura unit al detector pixelat.Es parteix de la hipòtesi que, mitjançant l'ús de les esmentades tècniques de disseny, les tecnologies CMOS estàndard satisfan tots els requeriments operacionals del detector VPD PbSe respecte a connectivitat, fiabilitat, funcionalitat i escalabilitat per integrar de forma econòmica el dispositiu. La càmera PbSe-CMOS resultant ha de consumir molt baixa potència, operar a freqüències de kHz, exhibir bona uniformitat, i encabir els píxels actius CMOS de lectura en el pitch compacte del pla focal de la imatge, tot atenent a les particulars característiques del detector: altes relacions de corrent d'obscuritat a senyal, elevats valors de capacitat paràsita a l'entrada i dispersions importants en el procés de fabricació.Amb la finalitat de complir amb els requisits previs, es proposen arquitectures de sensors de visió de molt baix acoblament interpíxel basades en l'ús d'una matriu de pla focal (FPA) de píxels actius exclusivament digitals. Cada píxel sensor digital (DPS) està equipat amb mòduls de comunicació d'alta velocitat, autopolarització, cancel·lació de l'offset, conversió analògica-digital (ADC) i correcció del soroll de patró fixe (FPN). El consum en cada cel·la es minimitza fent un ús exhaustiu del MOSFET operant en subllindar.L'objectiu últim és potenciar la integració de les tecnologies de sensat d'imatge infraroja (IR) basades en PbSe per expandir-ne el seu ús, no només a diferents escenaris, sinó també en diferents estadis de maduresa de la integració PbSe-CMOS. En aquest sentit, es proposa investigar un conjunt complet de blocs funcionals distribuïts en dos enfocs paral·lels: viii• Dispositius d'imatgeria MWIR "Smart" basats en frames utilitzant noves topologies de circuit DPS amb correcció de l'FPN en guany i offset. Aquesta línia de recerca exprimeix el pitch del detector per oferir una programabilitat completament digital a nivell de píxel i plena funcionalitat amb compensació de la capacitat paràsita d'entrada i memòria interna de fotograma.• Dispositius de visió MWIR "Compact"-pitch "frame-free" en base a un novedós esquema d'integració analògica en el DPS i diferenciació temporal configurable, combinats amb protocols de comunicació asíncrons dins del pla focal. Aquesta estratègia es concep per permetre una alta compactació del pitch i un increment de la velocitat de lectura, mitjançant la supressió del filtrat digital intern i l'assignació dinàmica de l'ample de banda a cada píxel de l'FPA. Aquest treball ha cond...

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“…To achieve the suppression of the useless currents prior to CCD multiplexing, several possible solutions exist [7,8,9]: reduction of the incoming photon flux by narrowing spectral band and field of view (FOW) of the detector; reduction of the integration time (at the expense of lower signal-to-noise ratio); oversampling (multiple detector signal readout during one sampling); various circuits design (subframe readout, DC level subtraction, antiblooming, charge partitioning, charge skimming, inpixel current memory cell, which enables PV direct current suppression [9]), etc. Among the available solutions to achieve background flux suppression in CCD ROICs we chose the classical charge skimming and partitioning functions, when only a part of charge in reference to the background flux is subtracted from the stored charge (skimming) or a fraction of the stored charge is transferred to the CCD (partitioning).…”

Section: Ccd and Circuit Approachesmentioning

confidence: 99%

“…From expressions (4) and (8) it follows that during the readout devices testing procedure one should change the potentials at the electrodes of direct injection transistors proportionally to the temperature change, at which the circuit parameters measurements are carried out. Fig.…”

Section: Testing Modementioning

confidence: 99%

IR sensor readout devices with source input circuits

Сизов¹

1999

Semicond. Phys. Quantum Electron. Optoelectron.

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High performance IR imaging systems for, e. g., surveillance and reconnaissance applications, are currently basically include focal plane arrays (FPAs) with multielement scanning or staring two-dimensional matrix of PV detectors cooled down to cryogenic temperatures with a signal processor. The FPA technologies mainly include two major technologies, hybrid and monolithic. The concept of the IR FPA hybrid technology is widespread as it permits separate optimization of the parameters of the detector array with a large number of sensitive elements and typical silicon readout device coupled with the detector array [1]. The major hybrid technology uses mercury-cadmium-telluride (MCT) PV detectors and silicon CCD or CMOS chips [1, 2] for readout and multiplexing of the stored charge from the detectors; there are a lot of various designs of such interface but practically they are the source coupling or gate coupling ones [3-5]. Performance requirements for IR FPAs are considerably varied with respect to the wavelength region, background photon radiation, operating temperature, dynamic range, noise, readout rate, power dissipation, detector biases, and some other parameters. IR FPAs are mainly clustered in atmospheric window wavelength ranges 1-2.5, 3-5, 8-12 µm, and depending on the wavelength region applied, they are aimed at T ≈ 250300, 77150, 2090 K operating temperatures, respectively. The primary function of a readout device for IR arrays is to provide an IR detector charge to voltage conversion, integration of the electrons generated in photodetector, preliminary signal processing, e.g., skimming, partitioning, amplification and time multiplexing of signals from the cooled detectors in the array [4] to much less number of outputs. In the case of scanning systems, TDI function should be used to improve performance of

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Attainment of high sensitivity at elevated operating temperatures with staring hybrid HgCdTe-on-sapphire focal plane arrays

Cited by 22 publications

References 7 publications

Readout device processing electronics for IR linear and focal plane arrays

Readout device processing electronics for IR linear and focal plane arrays

Low-Power CMOS Digital Pixel Imagers for High-Speed Uncooled PbSe IR Applications

IR sensor readout devices with source input circuits

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