Atomistic study of sulfur diffusion and S2 formation in silicon during low-temperature rapid thermal annealing

Abstract

Theoretical analyses predict th barrier reduction by sulfur doping at NiSi/Si j by S2 formation. The S2 formation may silicidation process, even under low temperat annealing. We have demonstrated that imp silicon forms S2 configuration under low t thermal annealing, based on first principles kinetic Monte Carlo (KMC) simulations.