2008
DOI: 10.1016/j.jeurceramsoc.2007.03.003
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Atomistic simulations on mullite Al2(Al2+2xSi2−2x)O10−x in a variable range of composition

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Cited by 8 publications
(2 citation statements)
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“…X denotes the number of lack oxygen atoms in unit cell and VI, IV stand for octahedral and tetrahedral coordination of Al atoms, respectively. The structure of mullite crystal is much more complicated, there are irregular tetrahedral double-stranded [XO 4 ] (X=Si,Al) existing in the structure, a number of oxygen vacancies exist in the structure and the position is not fixed, which can cause cationic displacement [4,5]. According to the theoretical model of anionic coordination polyhedron growth units [6,7], the single crystal cell is used to calculate as ideal crystal cell structure.…”
Section: VImentioning
confidence: 99%
“…X denotes the number of lack oxygen atoms in unit cell and VI, IV stand for octahedral and tetrahedral coordination of Al atoms, respectively. The structure of mullite crystal is much more complicated, there are irregular tetrahedral double-stranded [XO 4 ] (X=Si,Al) existing in the structure, a number of oxygen vacancies exist in the structure and the position is not fixed, which can cause cationic displacement [4,5]. According to the theoretical model of anionic coordination polyhedron growth units [6,7], the single crystal cell is used to calculate as ideal crystal cell structure.…”
Section: VImentioning
confidence: 99%
“…The chemical formula of mullite is often given by Al 4+2x Si 2-2x O 10-x , where x=0, x=0.25 and x=0.4 correspond to sillimanite, 3:2 mullite and 2:1 mullite, respectively (Campos et al, 2012;Chakraborty, 2008;Cividanes et al, 2010a;Fischer et al, 1996). The amount of oxygen vacancies per unit cell is represented by x, which is related to the replacement of silicon ions (Si 4+ ) by aluminum ions (Al 3+ ) in the tetrahedral sites of the mullite structure (Mazza et al, 2008). With increasing alumina content, the cation Si 4+ is replaced by the cation Al 3+ and the anion (oxygen) and the oxygen vacancies are created to maintain charge neutrality (Campos et al, 2012;Cividanes et al, 2011;Okada, 2008).…”
Section: Introductionmentioning
confidence: 99%