Atomistic simulations of hard and soft films under nanoindentation

Liu, Cheng‐Liang; Fang, Te-Hua; Lin, Jen Fin

doi:10.1016/j.msea.2006.10.093

Cited by 75 publications

(30 citation statements)

References 16 publications

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“…In the unloading stage, the repulsive load is obviously caused by the rebounding response of the substrate. The hardness [27], defined as the load at the maximum indentation depth over the projected contact area, is calculated. The projected contact area S is computed as follows:…”

Section: Resultsmentioning

confidence: 99%

Molecular dynamics simulations of nanoindentation of monocrystalline germanium

Zhu

Fang

2012

Appl. Phys. A

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Three-dimensional molecular dynamics simulations using the Tersoff potential are conducted to investigate the nanoindentation process of monocrystalline germanium (Ge). It is found that a phase transformation from fourfold-coordinated diamond cubic phase (Ge-I) to sixfold-coordinated β-tin phase (Ge-II) occurs during the nanoindentation process. The simulation results suggest that a pressure-induced phase transformation instead of dislocation-assisted plasticity is the dominant deformation mechanism of monocrystalline Ge thin films during the nanoindentation process.

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Section: Resultsmentioning

confidence: 99%

Molecular dynamics simulations of nanoindentation of monocrystalline germanium

Zhu

Fang

2012

Appl. Phys. A

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“…Fang et al [5] and Liu et al [6] performed MD simulations to examine the variation in Young's modulus, hardness and elastic recovery of copper, diamond and gold during nanoindentation at high temperatures (up to 600 K). They concluded that Young's modulus, hardness and the extent of elastic recovery (spring back) decreases with an increase of temperature.…”

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confidence: 99%

Influence of temperature on the anisotropic cutting behaviour of single crystal silicon: A molecular dynamics simulation investigation

Chavoshi

Goel

Luo

2016

Journal of Manufacturing Processes

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Using molecular dynamics (MD) simulation, this paper investigates anisotropic cutting behaviour of single crystal silicon in vacuum under a wide range of substrate temperatures (300 K, 500 K, 750 K, 850 K, 1173 K and 1500 K). Specific cutting energy, force ratio, stress in the cutting zone and cutting temperature were the indicators used to quantify the differences in the cutting behaviour of silicon. A key observation was that the specific cutting energy required to cut the (111) surface of silicon and the von Mises stress to yield the silicon reduces by 25% and 32%, respectively, at 1173 K compared to what is required at 300 K. The room temperature cutting anisotropy in the von Mises stress and the room temperature cutting anisotropy in the specific cutting energy (work done by the tool in removing unit volume of material) were obtained as 12% and 16% respectively. It was observed that this changes to 20% and 40%, respectively, when cutting was performed at 1500 K, signifying a very strong correlation between the anisotropy observed during cutting and the machining temperature.Furthermore, using the atomic strain criterion, the width of primary shear zone was found to vary with the orientation of workpiece surface and temperature i.e. it remains narrower while cutting the (111) surface of silicon or at higher machining temperatures. A major anecdote of 2 the study based on the potential function employed in the study is that, irrespective of the cutting plane or the cutting temperature, the state of the cutting edge of the diamond tool did not show direct diamond to graphitic phase transformation.

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“…Au is a soft metal compared with alumina, both Young's modulus and hardness decrease as the temperature and indentation load increase. [18] Under proper temperature and load, it is possible to imprint the harder bottom structure of the AAO template into the Au layer to form homogeneously separated nanoparticle arrays. Finally, in a UHV-CVD process, SiNWs catalyzed by the VLS mechanism grow epitaxially inside the pores with the same ordering and size as the AAO template.…”

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confidence: 99%