Abstract:Bias Temperature Instability (BTI) is a major concern for the reliability of decameter to nanometer devices. Older modeling approaches fail to capture time-dependent device variability or maintain a crude view of the device's stress. Previously, a two-state atomistic model has been introduced, which is based on gate stack defect kinetics. Its complexity has been preventing seamless integration in simulations of large device inventories over typical system lifetimes. In this paper, we present an approach that a… Show more
“…Menchaca et al [8] analyzed the BTI impact on different sense amplifier designs implemented on 32 nm technology node by using failure probability (i.e., flipping a wrong value) as a reliability metric. Agbo et al [9,10,11,12,13,14,15,16] investigated the BTI impact on SRAM drain-input and standard latch-type sense amplifier design, while considering process, supply voltage, and temperature (PVT) variations in the presence of varying workloads and technology nodes. Other research focused on mitigation schemes.…”
This paper proposes an appropriate method to estimate and mitigate the impact of aging on the read path of a 32 nm high performance SRAM design; it analyzes the impact of the memory cell, and sense amplifier (SA), and their interaction. The method considers different workloads and inspects both the bit-line swing (which reflect the degradation of the cell) and the sensing delay (which reflects the degradation of the sense amplifier); the voltage swing on the bit lines has a direct impact on the proper functionality of the sense amplifier. The results with respect to the quantification of the aging, show for the considered SRAM read-path design that the cell degradation is marginal as compared to the sense amplifier, while the sensing delay degradation strongly depends on the workload, supply voltage and temperature (up to 41% degradation). The mitigation schemes, one targeting the cell and one the sense amplifier, confirm the same and show that sense amplifier mitigation is more effective for the SRAM read path than cell mitigation.
“…Menchaca et al [8] analyzed the BTI impact on different sense amplifier designs implemented on 32 nm technology node by using failure probability (i.e., flipping a wrong value) as a reliability metric. Agbo et al [9,10,11,12,13,14,15,16] investigated the BTI impact on SRAM drain-input and standard latch-type sense amplifier design, while considering process, supply voltage, and temperature (PVT) variations in the presence of varying workloads and technology nodes. Other research focused on mitigation schemes.…”
This paper proposes an appropriate method to estimate and mitigate the impact of aging on the read path of a 32 nm high performance SRAM design; it analyzes the impact of the memory cell, and sense amplifier (SA), and their interaction. The method considers different workloads and inspects both the bit-line swing (which reflect the degradation of the cell) and the sensing delay (which reflects the degradation of the sense amplifier); the voltage swing on the bit lines has a direct impact on the proper functionality of the sense amplifier. The results with respect to the quantification of the aging, show for the considered SRAM read-path design that the cell degradation is marginal as compared to the sense amplifier, while the sensing delay degradation strongly depends on the workload, supply voltage and temperature (up to 41% degradation). The mitigation schemes, one targeting the cell and one the sense amplifier, confirm the same and show that sense amplifier mitigation is more effective for the SRAM read path than cell mitigation.
In order to address the challenge of optimization of pressure swing adsorption systems, an optimization framework based on pseudo transient continuation method was used and a corresponding library with several models was established for simulation of more complex processes. Then, two vacuum pressure swing adsorption processes for oxygen and nitrogen production were considered as case studies and the results based on the single discretization and pseudo transient method were compared and analyzed in detail. Besides, a new strategy was proposed for the stability and efficiency of simulation. Finally, reduced successive quadratic programming and time relaxation algorithm were used for the optimization of the two systems, respectively, and the results showed that the time relaxation algorithm based on the pseudo transient framework has a strong advantage in saving optimization time cost compared with the former.
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