Atomistic processes of boron and nitrogen near the Pt(111) surface

Park, Karam; Kim, Gyu Hyeong; Jeong, Sukmin

doi:10.1016/j.apsusc.2020.147901

Cited by 6 publications

(3 citation statements)

References 40 publications

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“…Cu(111) on sapphire provides an isolated and natural 2DES which exists as a surface state trapped between a Cu band gap along the [111] direction on the substrate side, and the insulating (vacuum or hBN) interface on the other side. Although hBN can be grown on other metals, such as Ir, , Rh, Ru, Cr, Fe, Ni, − Pd, , Pt, , we have chosen the Cu(111) system because of its demonstrated compatibility with wafer-scale technology and because its surface state is exceeding well characterized. The 2D electrons within this surface state have been used for a variety of fundamental experiments involving coherent quantum nanostructures and atom manipulation accessing quantum phase, quantum spin, and designer quantum materials .…”

Section: Background and Motivationmentioning

confidence: 99%

Nanoscale Electronic Transparency of Wafer-Scale Hexagonal Boron Nitride

et al. 2022

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Monolayer hexagonal boron nitride (hBN) has attracted interest as an ultrathin tunnel barrier or environmental protection layer. Recently, wafer-scale hBN growth on Cu(111) was developed for semiconductor chip applications. For basic research and technology, understanding how hBN perturbs underlying electronically active layers is critical. Encouragingly, hBN/Cu(111) has been shown to preserve the Cu(111) surface state (SS), but it was unknown how tunneling into this SS through hBN varies spatially. Here, we demonstrate that the Cu(111) SS under wafer-scale hBN is homogeneous in energy and spectral weight over nanometer length scales and across atomic terraces. In contrast, a new spectral featurenot seen on bare Cu(111) varies with atomic registry and shares the spatial periodicity of the hBN/Cu(111) moire. This work demonstrates that, for some 2D electron systems, an hBN overlayer can act as a protective yet remarkably transparent window on fragile low-energy electronic structure below.

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Section: Background and Motivationmentioning

confidence: 99%

Nanoscale Electronic Transparency of Wafer-Scale Hexagonal Boron Nitride

et al. 2022

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“…They explained the experimentally observed BN islands as triangles or hexagons. Jeong et al studied the adsorption and diffusion of h-BN on Pt(111). The stable positions of B and N on the substrate were found to be the hollow positions of the fcc and hcp.…”

Section: Introductionmentioning

confidence: 99%

Nucleation Mechanism of h-BN on the Au(111) Surface

Ding,

Guo,

Zeng

et al. 2023

J. Phys. Chem. C

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Chemical vapor deposition (CVD) growth of hexagonal boron nitride (h-BN) is considered to be one of the most promising approaches for the controlled mass production of h-BN thin films, which is a prerequisite for practical applications. However, the nucleation and growth mechanisms of h-BN crystals remain unclear. In this study, we examine h-BN growth on a Au(111) substrate to gain insights into the nucleation process of h-BN during CVD. We systematically investigate the structural nucleation behavior of h-BN clusters on Au(111) substrates using density functional theory combined with an unbiased global search method. The results reveal that distinct structural transformations of h-BN clusters occur when the atomic number is 12 or higher. These h-BN clusters tend to form 2D sp 2 network-like structures by combining quadrilateral and hexagonal shapes at the edges, effectively preventing the formation of B−B and N−N bonds. Furthermore, we find that the chemical potential difference (Δμ) significantly influences h-BN nucleation. In B-rich (B n N n−1 ) or N-rich (B n−1 N n ) environments, a chain structure initially forms and subsequently transforms into a 2D sp 2 network structure. These findings have significant implications for experimental h-BN growth on metal substrates as they facilitate the production of large-area, defect-free h-BN nanosheets.

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“…Recent advances in successful synthesis of h -BN mono- and multilayers directly on metallic and alloy substrates, including Cu, Pt, Au, Ni, etc., − through both chemical vapor deposition (CVD) and physical vapor deposition (PVD) methods have triggered the viability of large-area, continuous, stable h -BN films as anticorrosive coatings. For instance, high-quality h -BN atomic layers have been demonstrated that can effectively inhibit the oxidation of the underlaying Ni and Fe foil substrates at high temperatures for days.…”

Section: Introductionmentioning

confidence: 99%

Direct Growth of Hexagonal Boron Nitride Nanofilms on Stainless Steel for Corrosion Protection

Tang

Wang

Liu

et al. 2021

ACS Appl. Nano Mater.

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Protection of stainless steel from water, oxygen, and chloride ions is of crucial importance for diverse industrial fields; yet, it remains challenging to develop a proper solution with improved corrosion and oxidation resistance for long-term service durability. Here, we demonstrate the direct growth of hexagonal boron nitride (h-BN) nanofilms on the surface of stainless steel (ss304) by the magnetron sputtering method, serving as barrier coatings for protection in a corrosive environment. The obtained h-BN nanofilms are ∼200 nm in thickness, with a highly densified morphology, converting the hydrophilic surface of ss304 to a hydrophobic surface. These films exhibit excellent oxidation resistance at 600 °C in the atmosphere and enhanced anticorrosion performance as compared to the bare ss304. Moreover, they show robust and stable corrosion resistance when immersed in a 3.5 wt % NaCl electrolyte for over 10 weeks. The results suggest that the direct growth of h-BN nanofilms on ss304 holds great promise for corrosion inhibition and antioxidation of steel, therefore offering a feasible and effective route for long-term corrosion protection concerning practical applications of h-BN on industry-relevant surfaces.

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Atomistic processes of boron and nitrogen near the Pt(111) surface

Cited by 6 publications

References 40 publications

Nanoscale Electronic Transparency of Wafer-Scale Hexagonal Boron Nitride

Nanoscale Electronic Transparency of Wafer-Scale Hexagonal Boron Nitride

Nucleation Mechanism of h-BN on the Au(111) Surface

Direct Growth of Hexagonal Boron Nitride Nanofilms on Stainless Steel for Corrosion Protection

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